All Wet Photoresist Strip by Solvent Aerosol Spray

Wada, M.; Sano, Katsuhiko; Snow, Jim; Vos, Rita; Leunissens, L.H.A.; Mertens, Paul; Eitoku, Atsuro

doi:10.4028/www.scientific.net/ssp.145-146.285

Cited by 18 publications

(14 citation statements)

References 4 publications

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“…However, photoresist (PR) is only used as a mask for patterning, so it should be removed after use. Typical methods for removing photoresists are wet and dry [ 5 , 6 , 7 , 8 , 9 ]. Wet etching is a method using a chemical solution, and since photoresist is made of polymer, it is removed using an acidic solution.…”

Section: Introductionmentioning

confidence: 99%

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma

et al. 2022

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One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N2 gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O2 plasma ashing process in various N2/O2 mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.

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Section: Introductionmentioning

confidence: 99%

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma

et al. 2022

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“…1-4 Alternative cleans are being developed for removal of II-PR. [5][6][7][8][9][10][11][12][13][14][15] In order to design approaches for selective stripping of II-PR a more profound insight into the resist degradation induced by ion implantation is needed.The degradation of photoresist by ion bombardment is a complex phenomenon, which is discussed in few reports. 15-22 Some of them seem even contradictory or difficult to compare, mainly because the results are obtained on different resist systems (resist chemical structure) and/or implantation conditions such as ion species, ion energy, ion dose etc.…”

mentioning

confidence: 99%

“…[1][2][3][4] Alternative cleans are being developed for removal of II-PR. [5][6][7][8][9][10][11][12][13][14][15] In order to design approaches for selective stripping of II-PR a more profound insight into the resist degradation induced by ion implantation is needed.…”

mentioning

confidence: 99%

Degradation of 248 nm Deep UV Photoresist by Ion Implantation

Tsvetanova

Vos

Vereecke

et al. 2011

J. Electrochem. Soc.

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Wet processes are gaining a renewed interest for removal of high dose ion implanted photoresist (II-PR) in front-end-of-line semiconductor manufacturing because of their excellent selectivity towards the wafer substrate and gate materials. The selection of wet chemistries is supported by an insight into the resist degradation by ion implantation. In this work, different analytical techniques have been applied for in-depth characterization of the chemical changes in 248 nm DUV PR after arsenic implantation. A radical mechanism of resist degradation is proposed involving cross-linking and chain scission reactions. The cross-linking of the resist is dominant especially for high doses and energies. It leads to significant depletion of hydrogen and formation of carbon macroradicals that recombine to form C-C cross-linked crust. Moreover, formation of ab-unsaturated ketonic and/or quinonoid structures by cross-linking reactions is suggested. In addition, the dopant species may provide rigid points in the PR matrix by chemical bonding with the resist. For higher doses and energies further dehydrogenation occurs, which leads to formation of triple bonds in the crust. Different p-conjugated structures are formed in the crust by cross-linking and dehydrogenation reactions. No presence of amorphous carbon in the crust is revealed.In the processing of integrated circuits, the source and drain of a p-type and n-type metal-oxide-semiconductor field-effect transistor (MOSFET) are defined by implantation of donor and acceptor ions respectively. During the ion implantation, a photoresist is used as a masking material. The removal of high dose ( $ >1 Â 10 15 at. cm À2 ) and low energy ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo regions is considered one of the most challenging front-end-of-line (FEOL) processing steps for 32 nm and beyond technology nodes of logic devices. This is due to the difficulties of removing the modified layer (crust) formed on top and the sidewalls of the PR during the ion implantation in combination with the compatibility towards shallow implanted substrates, novel metal gate and high k-materials. Commonly used resist strip processes such as fluorine-based dry plasma ash and hot sulfuric/peroxide mixtures induce unacceptable levels of oxidation and material loss. 1-4 Alternative cleans are being developed for removal of II-PR. [5][6][7][8][9][10][11][12][13][14][15] In order to design approaches for selective stripping of II-PR a more profound insight into the resist degradation induced by ion implantation is needed.The degradation of photoresist by ion bombardment is a complex phenomenon, which is discussed in few reports. 15-22 Some of them seem even contradictory or difficult to compare, mainly because the results are obtained on different resist systems (resist chemical structure) and/or implantation conditions such as ion species, ion energy, ion dose etc. The chemical modifications in high energy ( $ > 100 keV) and high dose implanted novolak based resis...

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“…Several stripping methods have been studied in many years, [7][8][9] and in these days, single wafer cleaning has more interests than batch cleaning system in term of avoiding cross-contamination from wafer to wafer. [10][11][12][13][14] In typical 20-nm device fabrication, a carbonized hard crust layer is formed on the surface of the photoresist from HDI at surface concentrations of greater than 1 × 10 15 atoms/cm 2 . 15 Because this layer is quite difficult to remove or dissolve using standard chemicals, such as sulfuric-peroxide mixture (SPM), it has become a critical issue in wet single-wafer processing.…”

mentioning

confidence: 99%

Stripping of High-Dose Ion-Implanted Photoresist Using a Combination of Dry and Wet Single-Wafer Processing

Kinoshita¹,

Engesser²

2012

ECS J. Solid State Sci. Technol.

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High dosed ion implanted (HDI) photoresist is well-known to be difficult to remove by conventional wet stripping e.g. sulfuric–peroxide mixture without substrate loss because of their carbonized crust layer. To overcome this issue, several methods are proposed such as dry etch + wet, assist of physical cleaning. In this paper, a new method to strip HDI photoresist using a combination of dry and wet processing in the same chamber is introduced to achieve HDI photoresist removal without substrate loss. A new process consists of two steps. The first process removes the carbonized crust layer by atmospheric-pressure inductively coupled hydrogen plasma, and the second process removes remaining the bulk photoresist by a sulfuric–ozone mixture. The new process enables removal of the HDI photoresist without any substrate loss, and with significantly shorter times.

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All Wet Photoresist Strip by Solvent Aerosol Spray

Cited by 18 publications

References 4 publications

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma

Degradation of 248 nm Deep UV Photoresist by Ion Implantation

Stripping of High-Dose Ion-Implanted Photoresist Using a Combination of Dry and Wet Single-Wafer Processing

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