All-sputtered CdTe solar cell activated with a novel method

Camacho-Espinosa, E.; López-Sánchez, A.; Rimmaudo, I.; Mis-Fernández, R.; Peña, J. L.

doi:10.1016/j.solener.2019.09.023

Cited by 18 publications

(6 citation statements)

References 48 publications

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“…Usually, CdTe is deposited with close space sublimation technique, allowing Cd-rich conditions. [41,42] For this reason, the most important defect is Bi Te , which can induce an IB at 0.8 eV below to the CBM. The in-gap position of the IB is achieved only when the SOC is included in the calculations.…”

Section: Discussionmentioning

confidence: 99%

“…According to the formation energy, the thermodynamically more stable defects are Bi Te and Bi Cd for Cd‐rich and Te‐rich conditions, respectively. Usually, CdTe is deposited with close space sublimation technique, allowing Cd‐rich conditions . For this reason, the most important defect is Bi Te , which can induce an IB at 0.8 eV below to the CBM.…”

Section: Discussionmentioning

confidence: 99%

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Bismuth Doping of CdTe: The Effect of Spin–Orbit Coupling

Rios-Gonzalez¹,

Menéndez-Proupín

Peña³

2020

Physica Status Solidi (b)

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Using the Heyd, Scuseria, and Ernzerhof (HSE) hybrid functional, with the range‐separation parameter modified to match the CdTe bandgap, the electronic structure and thermodynamic properties of bismuth‐doped CdTe are calculated. The energy levels associated with bismuth in CdTe bandgap can be obtained only when the spin–orbit coupling (SOC) is included. Substitutional and interstitial Bi atom positions in CdTe lattice are investigated. Contrary to the outcome of calculations without SOC, these simple defects generate bands inside the CdTe bandgap. These bands can act as intermediate steps in two‐step light absorption processes that lead to increasing the photocurrent in the solar cell.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Bismuth Doping of CdTe: The Effect of Spin–Orbit Coupling

Rios-Gonzalez¹,

Menéndez-Proupín

Peña³

2020

Physica Status Solidi (b)

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“…Due to their high scalability, low energy consumption, and high efficiency, CdTe solar cells have proved to be one of the best candidates for energy production [6]. CdTe film can be deposited by various methods such as thermal vacuum deposition [7], close-spaced sublimation (CSS) [8], magnetron sputtering [9], spray pyrolysis deposition [10], vapour transport deposition (VTD) [11], an electrochemical technique [12], pulsed laser deposition (PLD) [13], and chemical bath deposition (CBD) technique [14]. The pulsed laser deposition (PLD) technique, which has been widely developed recently, is used to obtain nanomaterials and nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Study of the characterizationn of CdTe thin films prepared by the pulsed laser deposition technique with different laser energies

Kamel¹,

Aadim²,

Kadhim³

2023

Adv. Nat. Sci: Nanosci. Nanotechnol.

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This research studied the effects of different laser energies on structural and optical properties. We prepared CdTe thin films by PLD technique using an Nd:YAG laser with a wavelength of 1064 nm and different energies (400, 500, 600, and 700 mJ). The practical experiments were carried out at a temperature of 200 °C. XRD results revealed that all the prepared thin films have polycrystalline structures and cubic systems with average crystalline sizes of 34, 42, 54, and 57 nm for 400, 500, 600, and 700 mJ, respectively. We observed that the optical energy gap of CdTe thin films decreases with the increase of laser energy (1.87–1.58 eV). The topography of the surfaces of CdTe thin films deposited on glass substrates was studied by the AFM technique, and it was shown that the average diameter of all CdTe films increases with increasing laser energies. The mentioned properties were studied for the application of this thin film as the absorber layer in constructing a solar cell.

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“…Thin films of cadmium telluride and CdZnTe solid solution based on it are widely used in the creation of solar cells [1][2], as well as devices in the infrared (IR) and terahertz (THz) range [3, 4 and references]. CdZnTe, in contrast to CdTe, differs in the presence of Zn ions, which improves its mechanical properties (increase microhardness) and enhances the bond covalence.…”

Section: Introductionmentioning

confidence: 99%

Forming of CdZnTe thin films grown by hot wall epitaxy and their properties

Vuichyk

Rashkovetskyi

Lavoryk

et al. 2021

Phys. Chem. Solid St.

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In this work morphological, X-ray structural and optical studies of CdZnTe films grown by hot wall epitaxy method at relatively low substrate temperatures were performed. Possible mechanisms and processes of self-organization that occur during the growth of such structures are considered. It is shown that at thickness of film more than 130 nm on the surface, large (lateral size 150 - 200 nm, height - up to 10 nm) and small crystals are observed. The thicknesses and energy of the band gap width of the CdZnTe films grown at different growth times were determined. It is shown that the film absorption edge in the transmission spectra depends on the film thickness and the reasons for the shift of the film absorption edge are discussed.

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All-sputtered CdTe solar cell activated with a novel method

Cited by 18 publications

References 48 publications

Bismuth Doping of CdTe: The Effect of Spin–Orbit Coupling

Bismuth Doping of CdTe: The Effect of Spin–Orbit Coupling

Study of the characterizationn of CdTe thin films prepared by the pulsed laser deposition technique with different laser energies

Forming of CdZnTe thin films grown by hot wall epitaxy and their properties

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