2005 IEEE 36th Power Electronics Specialists Conference 2005
DOI: 10.1109/pesc.2005.1581777
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All Silicon Marx-bank Topology for High-voltage, High-frequency Rectangular Pulses

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Cited by 31 publications
(14 citation statements)
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“…The capacitances were selected equal to 230 µF resulting from (10) in a voltage drop of about 35 V. Since the maximum current allowed by the primary dc voltage source was 0.5 A and each period is 100 ms, the simulations indicated that inductors with L = 320 mH were a suitable choice. This value is also in between the bounds given in (15) and (16), which yield that L 1 should be between 705 mH and 171 mH, respectively. As Fig.…”
Section: A Simulationssupporting
confidence: 65%
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“…The capacitances were selected equal to 230 µF resulting from (10) in a voltage drop of about 35 V. Since the maximum current allowed by the primary dc voltage source was 0.5 A and each period is 100 ms, the simulations indicated that inductors with L = 320 mH were a suitable choice. This value is also in between the bounds given in (15) and (16), which yield that L 1 should be between 705 mH and 171 mH, respectively. As Fig.…”
Section: A Simulationssupporting
confidence: 65%
“…Some of the topologies previously suggested using semiconductor devices can produce bipolar pulses, but they require one more capacitor, one more controlled switch, and one more diode in total than the circuit proposed here, regardless of the number of circuit stages [13], [14]. Other configurations are only able to produce unipolar pulses unless the ground and load connections are changed offline [15]- [20] and they tend to have more switches. Namely, the configurations in [15]- [20] require at least 1.5 times more switches than the Marx stage of the proposed topology here for the same unipolar output voltage, as it will be described in Section II.…”
Section: Introductionmentioning
confidence: 91%
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