All-Semiconductor Plasmonic Resonator for Surface-Enhanced Infrared Absorption Spectroscopy

Abstract

Infrared absorption spectroscopy remains a challenge due to the weak light-matter interaction between micron-wavelengthed infrared light and nano-sized molecules. A highly doped semiconductor supports intrinsic plasmon modes at infrared frequencies, and is compatible with the current epitaxial growth processing, which makes it promising for various applications. Here, we propose an all-semiconductor plasmonic resonator to enhance the infrared absorption of the adsorbed molecules. An optical model is employed to investigate the effect of structural parameters on the spectral features of the resonator and the enhanced infrared absorption characteristics are further discussed. When a molecular layer is deposited upon the resonator, the weak molecular absorption signal can be significantly enhanced. A high enhancement factor of 470 can be achieved once the resonance wavelength of the resonator is overlapped with the desired vibrational mode of the molecules. Our study offers a promising approach to engineering semiconductor optics devices for mid-infrared sensing applications.

Narrowband Perfect Absorber Based on Dielectric-Metal Metasurface for Surface-Enhanced Infrared Sensing

“…We then considered the electromagnetic coupling between the guide modes and infrared vibrational modes of molecules to explore the performance of the proposed SEIRAS substrate. The dielectric constant of the molecules can be described as the Drude-Lorentz type dispersion [35,36]…”

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

“…12,15,[21][22][23][24][25][26] Among hyperdoped semiconductor materials, Si is the most desired material for plasmonic applications in the MIR spectral range, owing to its compatibility with the complementary metal-oxide-semiconductor (CMOS) technology. 21,22,[27][28][29][30][31][32] Moreover, a plasmonic material based on doped Si has certain advantages over other doped semiconductors, such as cost-effectiveness, environmental friendliness and the well-developed and versatile fabrication process. Importantly, compared to III-V semiconductors, the absence of optical phonon absorption in the FIR spectral range in Si will naturally reduce the plasmon losses since Si is a non-polar semiconductor.…”

“…Contrary to metals (Au, Ag, and Al), in which the density of free electrons is fixed and the resulting resonance frequencies are mainly located in the visible and near-infrared (VIS-NIR) spectral range [11], the plasmon resonance in doped semiconductors can be tuned over a broad spectral window, ranging from NIR to far-infrared (FIR) by controlling the carrier concentration [12,15,[21][22][23][24][25][26]. Among hyperdoped semiconductor materials, Si is the most desired material for plasmonic applications in the MIR spectral range, owing to its compatibility with the complementary metal-oxidesemiconductor (CMOS) technology [21,22,[27][28][29][30][31][32]. Moreover, a plasmonic material based on doped Si has certain advantages over other doped semiconductors, such as cost-effectiveness, environmental friendliness and the well-developed and versatile fabrication process.…”

Is the Use of Surface-Enhanced Infrared Spectroscopy Justified in the Selection of Peptide Fragments That Play a Role in Substrate–Receptor Interactions? Adsorption of Amino Acids and Neurotransmitters on Colloidal Ag and Au Nanoparticles

“…The first SEIRA studies used mainly noble metals (Ag, 4 Au, 5 and less frequently Cu 6 ). Later reports showed the possibility of using other metals, 7−14 semiconductors, 15 and polar dielectric nanostructures. 16 The SEIRA effect is mainly studied on chemically deposited and vapor-deposited metal island films, nanoparticle decorated films, 5 periodic array-based substrates (consisting of particles and holes), 17 and less frequently metal sols.…”

“…The first SEIRA studies used mainly noble metals (Ag, Au, and less frequently Cu). Later reports showed the possibility of using other metals, − semiconductors, and polar dielectric nanostructures …”