All-Oxide Thin Film Varactor: From Test Structure to SMD Component

Walk, Dominik; Kienemund, Daniel; Salg, Patrick; Zeinar, Lukas; Radetinac, Aldin; Komissinskiy, Philipp; Alff, Lambert; Jakoby, Rolf; Maune, Holger

doi:10.23919/eumc.2019.8910758

Cited by 1 publication

(1 citation statement)

References 14 publications

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“…[ 2 ] From the viewpoint of electronic device applications, these results revived the concept of all‐oxide tuneable capacitors (varactors) in metal‐insulator‐metal (MIM) geometry. [ 2,12–16 ] For making use of all‐oxide varactors in microwave circuits, such as phase shifters or tuneable filters for microwave broadband antennas in 5G microelectronic devices, the bottom electrode of the varactor should be thicker than the electromagnetic skin depth in the desired frequency range to minimize electromagnetic losses. [ 17 ] For example, SrMoO 3 bottom electrodes with a resistivity below 20 µ

\Omega

cm and a thickness of more than 5 µm are highly relevant for MIM‐type varactors operating at 5 GHz and beyond.…”

Section: Introductionmentioning

confidence: 99%

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO₃ Electrodes Investigated by Lift‐Off Membranes

Ruan,

Schreyer,

Jiang

et al. 2024

Adv Funct Materials

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Within the huge perovskite materials family, thin films of highly conducting materials such as SrMoO3, SrNbO3, and SrVO3 are candidates for low‐loss bottom electrodes in epitaxial all‐oxide devices, in particular for high‐frequency applications. Recently, the fully coherent growth of more than 5 µm thick SrMoO3 electrodes in a varactor device prototype epitaxial heterostructure has been reported. This result raises the question of the strain mechanism in such anomalously thick coherent epitaxial layers. Here, this question is addressed by comparing the lattice constants of coherently strained layers and their free‐standing membranes. SrMoO3 is mainly elastically strained within the heterostructure and fully relaxed after removal of the substrate. These results indicate a giant critical thickness, making highly conducting perovskites even more outstanding materials for high‐frequency applications that require electrode thicknesses beyond the skin depth. The described technology of lifting off thick SrMoO3 membranes joins the emerging field of freestanding oxide layer technology, opening unexplored avenues for single crystal investigations, novel perovskite nanostructures, and wafer transfer of functional oxides, walking in the footsteps of recent developments in van der Waals epitaxial heterostructures.

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\Omega

cm and a thickness of more than 5 µm are highly relevant for MIM‐type varactors operating at 5 GHz and beyond.…”

Section: Introductionmentioning

confidence: 99%

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO₃ Electrodes Investigated by Lift‐Off Membranes

Ruan,

Schreyer,

Jiang

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

All-Oxide Thin Film Varactor: From Test Structure to SMD Component

Cited by 1 publication

References 14 publications

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO₃ Electrodes Investigated by Lift‐Off Membranes

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO₃ Electrodes Investigated by Lift‐Off Membranes

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All-Oxide Thin Film Varactor: From Test Structure to SMD Component

Cited by 1 publication

References 14 publications

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO3 Electrodes Investigated by Lift‐Off Membranes

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO3 Electrodes Investigated by Lift‐Off Membranes

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Resources

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Giant Critical Thickness in Highly Conducting Epitaxial SrMoO₃ Electrodes Investigated by Lift‐Off Membranes

Giant Critical Thickness in Highly Conducting Epitaxial SrMoO₃ Electrodes Investigated by Lift‐Off Membranes