2016
DOI: 10.1364/ol.41.000238
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All-optical short pulse translation through cross-phase modulation in a VO_2 thin film

Abstract: VO2 is a promising material for reconfigurable photonic devices due to the ultrafast changes in electronic and optical properties associated with its dielectric-to-metal phase transition. Based on a fiber-optic, pump-probe setup at 1550 nm wavelength window, and by varying the pump-pulse duration, we show that the material phase transition is primarily caused by the pump-pulse energy. For the first time, we demonstrate that the instantaneous optical phase modulation of probe during pump leading edge can be uti… Show more

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(1 citation statement)
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“…Upon the MIPT, the crystalline structure changes from a high-symmetry tetragonal rutile phase (P4 2 /mnm, R phase) to a lower symmetry monoclinic phase (P2 1 /c, M 1 phase) with dimerized V–V pairs exhibiting alternating zig-zag like chains [4,5]. Noticeable physical property changes such as optical transmittance [7,8,9], electrical conductivity [10,11], permittivity [12,13], and magnetic susceptibility [14,15] can be observed, making these kind of materials potentially suitable for a great many stimuli-responsive devices, e.g., ultrafast optical switches [16,17], sensing devices [18,19], next-generation terahertz transistors [20], non-Boolean computing materials [21], uncooled infrared bolometer [22,23], and other novel concepts of switching devices [24,25,26,27,28].…”
Section: Introductionmentioning
confidence: 99%
“…Upon the MIPT, the crystalline structure changes from a high-symmetry tetragonal rutile phase (P4 2 /mnm, R phase) to a lower symmetry monoclinic phase (P2 1 /c, M 1 phase) with dimerized V–V pairs exhibiting alternating zig-zag like chains [4,5]. Noticeable physical property changes such as optical transmittance [7,8,9], electrical conductivity [10,11], permittivity [12,13], and magnetic susceptibility [14,15] can be observed, making these kind of materials potentially suitable for a great many stimuli-responsive devices, e.g., ultrafast optical switches [16,17], sensing devices [18,19], next-generation terahertz transistors [20], non-Boolean computing materials [21], uncooled infrared bolometer [22,23], and other novel concepts of switching devices [24,25,26,27,28].…”
Section: Introductionmentioning
confidence: 99%