All-optical measurement of Rashba coefficient in quantum wells

Eldridge, P. S.; Leyland, W. J. H.; Lagoudakis, Pavlos G.; Karimov, O. Z.; Henini, M.; Taylor, David A.; Phillips, R. T.; Harley, R. T.

doi:10.1103/physrevb.77.125344

Cited by 74 publications

(85 citation statements)

References 20 publications

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“…(5) with a fixed Dresselhaus splitting of γ = 11 eVÅ 3 . The value of γ perfectly fits previous measurements on two dimensional heterostructures 25 to the magnitude of the asymmetry of the electron wave function due to the electric field.…”

Section: Resultssupporting

confidence: 76%

“…These values are comparable in magnitude to previous measurements and clearly show a dependence on confinement energy in line with the energy dependence previously measured, i.e., larger confinement energy results in a smaller Rashba coefficient. 25 A higher potential gradient lowers the effective confinement via the quantum confined Stark effect and increases the asymmetry of the wave function. Figures 4 and 5 show that increasing confinement energy significantly reduces the anisotropy of both g * and s ⊥ .…”

Section: Resultsmentioning

confidence: 99%

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Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

et al. 2013

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Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate s and the electron Landé g factor g * to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D 2d → C 2v ). However, by looking at the anisotropy of both s and g * simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

et al. 2013

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“…BIA results from the symmetry of the zinc blende lattice, which in a QW leads to the so-called Dresselhaus [15] spin-splitting terms, one linear and one cubic in the in-plane momentum. SIA arises from the asymmetry of the QW structure, leading to the Rashba spin splitting term which is linear in the momentum [5][6][7][8]16]. …”

Section: Theorymentioning

confidence: 99%

“…Furthermore, the measurements listed above are restricted to low temperatures where the necessary quantum mechanical effects persist. In contrast, optical measurements of the spin relaxation in zero magnetic field provide an alternative measure of the spin splitting in the conduction bands [8].…”

Section: Introductionmentioning

confidence: 99%

“…The Rashba interaction is important for semiconductor spintronics because its magnitude (α), and therefore E R can be modulated via an applied electric field F. Accordingly, we emphasise that it is not simply the magnitude of E R that is important, but also the ease with which an applied electric field, F, can modulate this effect. α is often related to F through the linear expression α = eα 0 F, where α 0 is the socalled Rashba coefficient, related to the band structure of the host crystal [8], and is predicted to be largest in materials with narrow band gaps and high spin-orbit splitting such as InSb [9]. While this linear relationship is not strictly accurate [10], the conceptual α 0 remains a valid figure of merit to compare the relative spintronic potential of different materials -the experimental knowledge of which is essential.…”

Section: Introductionmentioning

confidence: 99%

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Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

Leontiadou¹,

Litvinenko²,

Gilbertson³

et al. 2011

J. Phys.: Condens. Matter

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Abstract.We report the optical measurement of the spin dynamics at elevated temperatures and in zero magnetic field, for two types of degenerately doped n-InSb quantum wells (QWs), one asymmetric (sample A) and one symmetric (sample B) with regards to the electrostatic potential across the QW. Making use of three directly determined experimental parameters: the spin lifetime, τ s , the sheet carrier concentration, n, and the electron mobility, , we directly extract the zero field spin splitting. For the asymmetric sample where the Rashba interaction is the dominant source of spin splitting, we deduce a room temperature Rashba parameter of  = 0.09 ± 0.1 eVÅ which is in good agreement with calculations and we estimate the Rashba coefficient α 0 (a figure of merit for the ease with which electron spins can be modulated via an electric field). We review the merits/limitations of this approach and the implications of our finding for spintronic devices.

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Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto‐optical Kerr microscopy

Henn

Kießling

Molenkamp

et al. 2014

Physica Status Solidi (b)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.We review on time and spatially resolved two-color pumpprobe magneto-optical Kerr effect (MOKE) microscopy studies of electron spins in bulk n-GaAs and GaAs (110) quantum wells (QWs) at low lattice temperatures. The influence of photocarrier heating by above-bandgap optical spin excitation on the spatially resolved magneto-optical spin detection is considered in detail. We demonstrate that a continuous-wave (cw) measurement of the local Kerr rotation at a fixed arbitrary probe wavelength in general does not correctly reveal the local spin polarization when hot electrons are present. For bulk GaAs we determine the true lateral electron spin polarization profile from cw measurements of the spatial dependence of the full excitonic Kerr rotation spectrum. For the (110) QWs, we directly obtain the electron spin diffusion coefficient from picosecond real space imaging of the time evolution of an optically excited electron spin packet, which we observe with a spectrally broad probe pulse. IntroductionSpintronics demands for precise control of the storage, manipulation, and transfer of electron spin coherence in solid state systems [1,2]. In semiconductors, the time and length scales available for these operations are characterized by the spin relaxation time τ s , the spin diffusivity D s , and the related spin mobility μ s [3,4]. Pump-probe MOKE spectroscopy is a particularly valuable tool for the all-optical investigation of spin phenomena in semiconductors and the determination of these parameters. Because of its high temporal and spatial resolution it has been used extensively to study spin relaxation and spin transport in bulk semiconductors and low-dimensional systems [5][6][7][8][9][10][11].Pump-probe MOKE spectroscopy and the related spin noise spectroscopy both infer information on the electron spin system of semiconductors by measuring small changes in the polarization of a linearly polarized probe laser. In spin

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All-optical measurement of Rashba coefficient in quantum wells

Cited by 74 publications

References 20 publications

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto‐optical Kerr microscopy

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