All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

Krol, Mark F.; Ohtsuki, T.; Khitrova, G.; Boncek, Raymond K.; McGinnis, B. P.; Gibbs, H. M.; Peyghambarian, N.

doi:10.1063/1.108637

Cited by 17 publications

(4 citation statements)

References 15 publications

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“…The InP substrate which was approximately 400 tm thick was also left on the structure. Ideally, as in [6], the back mirror would be deposited between the substrate and the MQW region. In this instance only the MQW region contributes to the thickness of the spacer region.…”

Section: Semiconductor Saturable Absorber Characterizationmentioning

confidence: 99%

<title>Contrast ratio enhancement in a saturable absorber-based photonic analog-to-digital converter</title>

Hayduk

Bussjager

Johns

et al. 2002

Photonic and Quantum Technologies for Aerospace Applications IV

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Optical processing techniques are expected to play a key role in the next generation of advanced high-speed analog-to-digital converters (ADCs). These techniques will alleviate the current limitations inherent in conventional electronic ADCs. We are currently developing a novel photonic ADC module that incorporates the use of semiconductor saturable absorbers to perform the data quantization at speeds in the tens of GHz regime. Results will be presented for the experimental material characterization of the semiconductor saturable absorbers used in the data conversion process. Enhancement of the contrast ratio of the saturable absorber between the 'on' state and the 'off' state can also be greatly enhanced by the use of an asymmetric Fabry-Perot etalon. Initial experimental results for a saturable absorber contained within an etalon will also be presented.

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Section: Semiconductor Saturable Absorber Characterizationmentioning

confidence: 99%

<title>Contrast ratio enhancement in a saturable absorber-based photonic analog-to-digital converter</title>

Hayduk

Bussjager

Johns

et al. 2002

Photonic and Quantum Technologies for Aerospace Applications IV

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“…One of the common materials used in an AFP optical switch is quantum well due to its large QCSE property. Optical switch with high contrast ratio operating on reflection mode has been fabricated in GaAs-AlGaAs multiple quantum well with 27:1 contrast ratio at 2.5 mW power [132][133], in strained InGaAs-GaAs structure with 12.2:1 contrast [134], and in GaAlInAs-AlInAs quantum well with on-off contrast ration of 1000:1 at 30 kW/cm 2 [135]. An alternative transmission mode for optical switch based on quantum well has been suggested to use uniaxial themally induced strain created externally by bonding a free standing GaAs-AlGaAs quantum well thin film to LiTaO 3 at high temperature, which can yield a contrast ratio of 330:1 [136].…”

Section: Application Of Optical Bistabilitymentioning

confidence: 99%

Optical bistability in mesoporous silicon microcavity resonators

Pham

Qiao

Guan

et al. 2011

Journal of Applied Physics

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Porous silicon (PSi) has been shown to be a material with varieties of nonlinear optical properties. These properties have been discussed in terms of its nature of photoluminescence mechanism such as quantum confinement, surface states and the role of impurities. PSi has also been shown to be a useful material for optical devices, and have potential applications in fields such as bio-sensing and efficient lighting. In the following thesis, I present my theoretical and experimental results in studying a nonlinear optical property, known as optical bistability, in mesoporous silicon microcavity devices. The results show significant optical hysteresis in the transmission and reflection properties of mesoporous silicon microcavities when illuminated with a 150 nanosecond pulsed laser at 532 nm. The optical hysteresis is shown to be transient in nature and the properties are strongly dependent on the porosity of the cavity layer. The onset and damage threshold intensity are also shown to be porosity dependent. Modeling suggests that the observed effects are due to changes in the nonlinear refractive index and the transient lifetime increases with increasing porosity. The role of surface states was also investigated on influencing the bistable process by passivating the internal porous surface with hydrosilylation chemistry. The role of the number of periods in the cavity structure is also studied. The cavity is doped with quantum dot to improve its switching intensity. The optical bistable property of the cavity was also investigated by using a 532 nm continuous wave (CW) laser with maximum power of 10 mW, modulated by an optical chopper. The only sample that yields significant hysteresis is the sample doped with quantum dot, with millisecond respone time. The results show that the sample doped with quantum dot shows both electronic and thermal process in forming optical hysteresis. Finally, I develop a theoretical model to study the transient hysteresis shape. The model suggests that the power and pulse width of the excitation laser source strongly influence the shaping of the bistable curves. The nature of the nonlinear refractive index is also quantified in terms of the power and the width of the excitation pulse. The third order nonlinear coefficient is calculated to be in the order of 10-10 esu while the passivated samples yield results in the order of 10-9 esu, which agree with previous findings in literature.

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“…Results reported to date for these quaternary quantum wells show only moderate success. 2,3 Here we report the observation of well-defined excitons with large Stark shifts in a superlattice ͑SL͒-equivalent ͑In,Ga͒As/͑In,Al͒As multiple-quantum-well ͑MQW͒ structure whose fundamental absorption edge is just below 1.3 m. In the SL-equivalent well, the semiconductor material comprising the well is replaced by a fine-period superlattice. Using SL-equivalent wells allows one to tailor the absorption edge of the quantum well to a desired value, while at the same time retaining a reasonably large Stark shift.…”

mentioning

confidence: 91%

Superlattice-equivalent (In,Ga)As/(In,Al)As quantum wells with large Stark shifts in the 1.3-μm spectral region

Leavitt

Bradshaw

Pham

1995

Applied Physics Letters

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All-optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm

Cited by 17 publications

References 15 publications

<title>Contrast ratio enhancement in a saturable absorber-based photonic analog-to-digital converter</title>

<title>Contrast ratio enhancement in a saturable absorber-based photonic analog-to-digital converter</title>

Optical bistability in mesoporous silicon microcavity resonators

Superlattice-equivalent (In,Ga)As/(In,Al)As quantum wells with large Stark shifts in the 1.3-μm spectral region

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