All-Optical Fiber Hanbury Brown &amp; Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot

Muñoz‐Matutano, Guillermo; Barrera, David; Fernández-Pousa, Carlos R.; Chuliá-Jordán, Raquel; Seravalli, L.; Trevisi, Giovanna; Frigeri, P.; Sales, Salvador; Martínez‐Pastor, Juan P.

doi:10.1038/srep27214

Cited by 31 publications

(26 citation statements)

References 47 publications

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“…Metamorphic InAs QD structures have found successful applications in the design and fabrication of IR photonic and light-sensitive devices, such as lasers [ 19 , 20 ], single-photon sources [ 3 , 7 , 21 , 22 ], and solar cells [ 23 – 25 ]. In(Ga)As QD photodetectors based on interband and intersubband transitions are currently actively investigated for enhanced detection from near-IR to longwave-IR ranges due to their response to the irradiation at normal incidence [ 26 – 30 ].…”

Section: Introductionmentioning

confidence: 99%

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

et al. 2018

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Photoelectric properties of the metamorphic InAs/InxGa1 − xAs quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of InxGa1 − xAs cladding layer have been grown: indium content x was 0.15, 0.24, 0.28, and 0.31. InAs/In0.15Ga0.85As QD structure was found to be photosensitive in the telecom range at 1.3 μm. As x increases, a redshift was observed for all the samples, the structure with x = 0.31 was found to be sensitive near 1.55 μm, i.e., at the third telecommunication window. Simultaneously, only a slight decrease in the QD PC was recorded for increasing x, thus confirming a good photoresponse comparable with the one of In0.15Ga0.75As structures and of GaAs-based QD nanostructures. Also, the PC reduction correlate with the similar reduction of photoluminescence intensity. By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures. All this implies that metamorphic QDs with a high x are valid structures for optoelectronic infrared light-sensitive devices.

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Section: Introductionmentioning

confidence: 99%

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

et al. 2018

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“…Recently, single photon emission at 1.3 μm from the metamorphic QDs has been demonstrated [ 8 , 9 ], alongside the feasibility of photon emission evolution at such crucial wavelength and the perspective of a further extension of wavelength of emitted quantum light up to 1.55 μm [ 10 ]. Beside these very relevant results for quantum science applications, such nanostructures have been used for other novel devices such as metamorphic QD lasers [ 11 , 12 ] and metamorphic QD solar cells [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

et al. 2017

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Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer). Different optical transitions between states of QDs, wetting layers, GaAs or InGaAs buffers, and defect-related centers were studied by means of photovoltage (PV), photoconductivity (PC), photoluminescence (PL), and absorption spectroscopies. It was shown that the use of the InGaAs buffer spectrally shifted the maximum of the QD PL band to 1.3 μm (telecommunication range) without a decrease in the yield. Photosensitivity for the metamorphic QDs was found to be higher than that in GaAs buffer while the photoresponses for both metamorphic and pseudomorphic buffer layers were similar. The mechanisms of PV and PC were discussed for both structures. The dissimilarities in properties of the studied structures are explained in terms of the different design. A critical influence of the defects on the photoelectrical properties of both structures was observed in the spectral range from 0.68 to 1.0 eV for contact configuration (ii), i.e., in the case of electrically active GaAs wafer. No effect of such defects on the photoelectric spectra was found for configuration (i), when the structures were contacted to the top and bottom buffers; only a 0.83 eV feature was observed in the photocurrent spectrum of pseudomorphic structure and interpreted to be related to defects close to InAs/GaAs QDs.

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“…In the last two decades, composite materials containing semiconductor nanostructures have found great use in photonic applications due to light sensitivity, ease and low cost of fabrication, spectral tunability, and highly efficient emission with short lifetime [ 1 – 5 ]. In(Ga)As quantum dot (QD) heterostructures is an important class of infrared-sensitive nanostructures, which has been widely employed in various photonic devices, such as lasers [ 2 , 6 ], single-photon sources [ 7 , 8 ], photodetectors [ 9 – 13 ], and solar cells [ 14 – 16 ]. Numerous investigations have been devoted to improve the photoelectric properties of such light-sensitive devices.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

et al. 2017

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The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n +-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related to QDs and their cladding layers with the substrate-related defects and deepest grown layer. No direct substrate effects were found in the spectra of the buffer-contacted structures. However, a notable negative influence of the n +-GaAs buffer layer on the photovoltage and photoconductivity signal was observed in the InAs/InGaAs structure. Analyzing the obtained results and the performed calculations, we have been able to provide insights on the design of metamorphic QD structures, which can be useful for the development of novel efficient photonic devices.

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All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot

Cited by 31 publications

References 47 publications

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

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