All-Optical Control of the Silicon-Vacancy Spin in Diamond at Millikelvin Temperatures

Becker, Jens; Pingault, Benjamin; Gross, David J.; Gündoğan, Mustafa; Kukharchyk, Nadezhda; Markham, Matthew; Edmonds, Andrew M.; Atatüre, Mete; Bushev, Pavel; Becher, Christoph

doi:10.1103/physrevlett.120.053603

Cited by 132 publications

(108 citation statements)

References 41 publications

(39 reference statements)

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“…It is worth pointing out that not all SiV − centers in Type‐IIa diamond exhibit the remarkable coherence properties as discussed above. In some samples, the spin coherence time does not show any improvement during the cool down from 4 K to 100 mK, although the spin relaxation time

T_{1}^{Spin}

exhibits an enhancement by a factor of 300 . Becker et al.…”

Section: Spin Control Of Single Xv− Color Centermentioning

confidence: 97%

“…At cryogenic temperature and zero magnetic field, the transition between these energy levels lead to a characteristic four‐line emission pattern in ZPL spectrum of SiV − , GeV − , SnV − , and PbV − centers, as shown in Figure c. These optically allowed transitions form a double‐Λ system, which has been utilized to realize orbital‐based coherent control schemes . An interesting observation is that the transition energy of the split‐vacancy center does not follow a monotonically linear increase with increasing the atomic number of group‐IV atom.…”

Section: Optical Properties Of Xv− Color Centers In Diamondmentioning

confidence: 99%

“…[] with

T = 100 normalmK

α < 0 . 5^{\circ}

10^{- 3} %

13 C, whereas

T_{2}^{normalEcho} = 0.2 normalms

for 1.1% 13 C. In ref. [],

T_{2}^{normalEcho} = 138 normalns

for

T ≃ 40 normalmK

α = 70 . 5^{\circ}

;…”

Section: Optical Properties Of Xv− Color Centers In Diamondmentioning

confidence: 99%

“…Specifically, coherent control of XV − center has been realized and demonstrated with various combinations of energy levels (see Figure b), such as a two‐level system composed of an orbital ground and an orbital excited state, a three‐level Λ‐system based on two orbital ground states, and single Λ‐system composed of two spin ground states . For the first scenario composed of

| 12 ⟩

‐

| AB ⟩

system, the associated coherence time (

T_{2}^{★ normalExcited}

) has been characterized to be no more than 2 ns based on free induction decay (FID) or Rabi oscillation measurement, limited by multiple factors, including spontaneous decay, orbital thermalization, and interactions with the phonons …”

Section: Coherent Control Of Xv− Color Centermentioning

confidence: 99%

“…Despite of relatively short coherence time, full control of SiV − spin manifold (i.e., arbitrary SU(2) rotation of a qubit on Bloch sphere) has been realized by either using resonant microwave field or via an all‐optical method . These experiments are implemented at cryogenic temperature of 4.2 K, at which the thermal energy (

k_{normalB} T \approx 0.34 meV

) is still too high to eradicate the phonons at the energy of ground‐state splitting, that is,

{normalΔ}_{normalGS} ≃ 0.2 meV

.…”

Section: Spin Control Of Single Xv− Color Centermentioning

confidence: 99%

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Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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One ultimate goal of quantum information processing is to construct a quantum network for direct sharing of quantum information between distant parties based on stationary qubits for information storage and flying qubits for information transmission. This requires long‐lived quantum memories, efficient light–matter interface, and deterministic quantum gate operations. Among matter qubits, the electron spin of nitrogen vacancy center in diamond is an appealing option for its long coherence time at room temperature, deterministic microwave control, and optical preparation and readout of the qubit. However, its poor optical properties, including weak zero‐phonon‐line emission and large spectral diffusion, limit its potential for large‐scale deployment in quantum nodes. This has motivated the investigation for alternative quantum emitters that combine long‐time memory and coherent optical properties together. The emerging group‐IV split‐vacancy color centers in diamond, such as silicon‐vacancy, germanium‐vacancy, tin‐vacancy, and lead‐vacancy centers, are promising candidates of this ongoing exploration. These quantum emitters simultaneously possess microsecond spin coherence time and optically bright transitions with narrow linewidths. This review reports recent efforts on extending the spin coherence time of these color centers via temperature, strain, and charge control, which paves the road towards constructing solid‐based matter–photon interface for quantum network applications.

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T_{1}^{Spin}

exhibits an enhancement by a factor of 300 . Becker et al.…”

Section: Spin Control Of Single Xv− Color Centermentioning

confidence: 97%

Section: Optical Properties Of Xv− Color Centers In Diamondmentioning

confidence: 99%

“…[] with

T = 100 normalmK

α < 0 . 5^{\circ}

10^{- 3} %

13 C, whereas

T_{2}^{normalEcho} = 0.2 normalms

for 1.1% 13 C. In ref. [],

T_{2}^{normalEcho} = 138 normalns

for

T ≃ 40 normalmK

α = 70 . 5^{\circ}

;…”

Section: Optical Properties Of Xv− Color Centers In Diamondmentioning

confidence: 99%

| 12 ⟩

‐

| AB ⟩

system, the associated coherence time (

T_{2}^{★ normalExcited}

Section: Coherent Control Of Xv− Color Centermentioning

confidence: 99%

k_{normalB} T \approx 0.34 meV

) is still too high to eradicate the phonons at the energy of ground‐state splitting, that is,

{normalΔ}_{normalGS} ≃ 0.2 meV

.…”

Section: Spin Control Of Single Xv− Color Centermentioning

confidence: 99%

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Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

2019

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Quantum Optics with Solid‐State Color Centers

Munns

Orphal-Kobin

Pieplow

et al. 2023

Photonic Quantum Technologies

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Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

Jaffe

Felgen

Gal

et al. 2018

Advanced Optical Materials

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In contrast to the more common nitrogen-vacancy (NV) center in diamond, the SiV possesses bright narrow band and spectrally stable optical transition concentrated (70% of the fluorescence) in its zero phonon line (ZPL) protected by inversion symmetry, even at room temperature. [4,5] Despite these attractive characteristics, some properties hinder the SiV applicability: short coherence times (nanosecond scale), limited mainly by coupling to the thermal acoustic phonon bath [6] and low extraction efficiency from the high-index diamond substrate. Different methods for mitigating these issues have been investigated in recent years, [1,[7][8][9][10] but currently there is no apparent approach to exploit the SiV superb optical properties at room temperature and at the same time to increase its photon outcoupling without compromising its optical quality and coherence. The use of nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection within the diamond, but at the same time may introduce additional decoherence [11] and optical instability mechanisms attributed to poor surface quality (surface defects containing spins, charge traps, nondiamond phases, surface termination of atoms and groups [12] ) as a result of the synthesis or structuring process. The SiVs can be formed in the diamond host via ion implantation of silicon ions [1,13] or by introducing silicon atoms from a solid or gas precursor during the growth stage of diamond layers. [14,15] The latter is considered to better preserve the quality of the diamond layer by avoiding implantation damages and promoting a smaller amount of vacancy clusters and nonradiative sites which can otherwise hinder the SiV applicability. Herein, the ability to sculpt nanostructures by a bottom-up approach enables the creation of higher quality complex structures that are not accessible via top-down fabrication techniques. [16][17][18] In particular, this concerns the fabrication of highly confined and deterministic nanostructures hosting an atom-like system that maintain the original substrate quality -a critical prerequisite for quantum information and sensing applications. Here, we present a robust and deterministic template-assisted bottom-up process for the creation of high-quality nanoscale diamond pyramids incorporating SiVs.The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications. However, when embedded in bulk diamond, this emitter suffers from both, relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds is impeded by optical dephasing owing to their degraded surface quality. Here a robust and deterministic template-assisted bottom-up process for the creation of high-quality diamond nanopyramids incorporating SiVs is reported. This method employs a predefi...

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All-Optical Control of the Silicon-Vacancy Spin in Diamond at Millikelvin Temperatures

Cited by 132 publications

References 41 publications

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

Quantum Optics with Solid‐State Color Centers

Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers

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