All-monolithic InAlGaAs/InP VCSELs for 1.3 /spl sim/ 1.5 /spl mu/m wavelength ranges

Park, M.R.; Kwon, O–Kyun; Han, Won-Seok; Kim, J.H.; Park, S.H.K.; Song, Hyunwoo; Lee, V.H.; Park, S.J.; Yoo, Byueng–Su

doi:10.1109/ofc.2005.192972

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2013

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“…1310 nm VCSELs with InAlGaAs/InP quantum wells comprise tunnel junction injection of carriers in the active region and 2 distributed Bragg reflectors (DBRs). In recent designs these reflectors comprize one [3], or two [7] asgrown InAlGaAs/InP DBRs, one [3], or two dielectric DBRs [8] and two AlGaAs/GaAs wafer fused DBRs [1], [2]. AlGaAs/GaAs DBRs that proved very effective in shortwavelength VCSELs, are very well suited for 1310 nm devices because of higher refractive index contrast compared with asgrown InAlGaAs/InP DBRs and much better thermal conductivity compared with both as-grown and dielectric DBRs.…”

Section: Introductionmentioning

confidence: 99%

Reliability of 1310 nm Wafer Fused VCSELs

Sirbu

Suruceanu²,

Яковлев

et al. 2013

IEEE Photon. Technol. Lett.

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Wafer fusion vertical cavity surface emitting laser (VCSEL) technology has produced devices that successfully passed all mechanical and electrical Telcordia qualification tests. Accelerated lifetime tests result in times to 1% failure at 70 °C of 18 years and 30 years at VCSEL driving currents of 9 and 8 mA, respectively. These lifetimes meet the telecom industry reliability requirements for applications in fiber-optic communications networks.

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