All metal nanoelectromechanical switch working at 300 °C for rugged electronics applications

Qian, You; Soon, Bo Woon; Singh, Pushpapraj; Campanella, Humberto; Lee, Chengkuo

doi:10.1039/c3nr05255a

Cited by 23 publications

(20 citation statements)

References 21 publications

(17 reference statements)

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“…The NEM switch components can be produced from a wide range of nanostructures (e.g., thin films [ 5 – 7 ], nanobundles [ 8 ], nanowires [ 9 – 14 ], nanotubes [ 15 – 16 ]) fabricated from different materials (e.g., metals [ 17 – 19 ], semiconductors [ 9 – 10 20 – 23 ], carbon allotropes, including graphene [ 24 – 31 ] and carbon nanotubes [ 12 , 15 – 16 32 – 37 ]). With a proper choice of material and architecture, NEM switches can withstand relatively high radiation levels and extreme temperatures [ 19 , 25 , 38 – 39 ], highlighting their potential for applications in harsh environments.…”

Section: Reviewmentioning

confidence: 99%

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

Jasulaneca¹,

Kosmača²,

Meija³

et al. 2018

Beilstein J. Nanotechnol.

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This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM switching devices is provided, and together with their operational parameters, the reliability issues and impact of the operating environment are discussed. Finally, the most common NEM switch failure modes and the physical mechanisms behind them are reviewed and solutions proposed.

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Section: Reviewmentioning

confidence: 99%

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

Jasulaneca¹,

Kosmača²,

Meija³

et al. 2018

Beilstein J. Nanotechnol.

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“…All-metal based NEMS switches seem to be a reasonable choice to align with post-CMOS process. Our preliminary study [29] shows that all-metal based fixed-fixed beam NEMS switch has reliable performance even under accelerated high temperature measurement.…”

mentioning

confidence: 82%

“…The process has been briefly introduced in [29], we would like to share some in-depth discussion and consideration. Unlike conventional process designed for laterally actuated NEMS switches ( Fig.…”

Section: Fabrication Processmentioning

confidence: 99%

“…The measurement indicates that a higher gate voltage helps to stabilize the contact resistance, but further improvement should be done by proper surface coating [43]- [45]. A long time accelerated reliability measurement can be found in [29]. A 28 μm long device is cycled for 28 hours under a 300°C environment without obvious performance degradation.…”

Section: Electrical Measurement Of a Typical Devicementioning

confidence: 99%

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Pull-In Voltage and Fabrication Yield Analysis of All-Metal-Based Nanoelectromechanical Switches

Qian

Soon

Lee

2015

J. Microelectromech. Syst.

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We designed a one-mask process for all-molybdenum-based laterally actuated nanoelectromechanical switches. The damascene-like process is designed to ensure a smooth, high-aspect ratio, and metal-to-metal mechanical contact. Based on the statistical study of 800 devices, very high process yield can be achieved for fixed-fixed beam devices by selecting suitable device dimensions, i.e., the beam length versus beam width ratio should be <70 and the ratio of actuation gap to contact gap should be >1.5. Typical failure modes are also discussed.[ 2014-0391]Index Terms-Switches, nanoelectromechanical systems, electrostatic devices. I. INTRODUCTIONE LECTROSTATICALLY actuated micro/nano electromechanical system (M/NEMS) switches have been attracting attention for their excellent switching properties including zero-leakage current, abrupt switch behavior and potential to operate in high temperature [1]- [5]. These unique properties make NEMS switch a strong candidate for ultra-low power electronics and harsh environment integrated circuit (IC) [6]-[10].On the other hand, it would be difficult for NEMS switches to entirely replace CMOS transistors in high performance ICs, since NEMS switches have lower a operating frequency due to their large mechanical delay. To avoid the low speed NEMS switches slowing down the circuit and fully utilize their zero leakage properties, several applications have been proposed for NEMS-CMOS integration, by using NEMS switches to replace speed insensitive elements in field programmable gate array [11]-[15], power gating [16]-[18] and static random access memory [19]-[21]. Studies indicate that introducing NEMS switches would largely reduce the power consumption of the whole NEMS-CMOS IC. To realize hybrid NEMS-CMOS circuit [22], [23], directly fabricating NEMS switches on top of CMOS layer would be a realistic and cost-effective technique. The semiconductor industry has developed air gap back end process [24] which is most suitable for the NEMS-CMOS hybrid circuit. Manuscript

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“…Additionally, the material used, i.e., Mo and SiO 2 , is high-temperature stable and is best suited even for rugged environment applications such as space exploration, oil drilling, and mining. 35 Interestingly, as the effective spacer thickness and the peak absorption wavelength are almost linearly related, these devices can also be used for wide range of sensing applications such as accelerometers, pressure sensors, and flow sensors. These devices have a promisingly wide range of application areas with very high potential to be commercialized.…”

mentioning

confidence: 99%

Micro-electro-mechanically switchable near infrared complementary metamaterial absorber

Pitchappa

Kropelnicki

et al. 2014

Applied Physics Letters

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All metal nanoelectromechanical switch working at 300 °C for rugged electronics applications

Cited by 23 publications

References 21 publications

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

Pull-In Voltage and Fabrication Yield Analysis of All-Metal-Based Nanoelectromechanical Switches

Micro-electro-mechanically switchable near infrared complementary metamaterial absorber

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