All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

Mashford, Benjamin S.; Nguyen, Tich-Lam; Wilson, Gerard J.; Mulvaney, Paul

doi:10.1039/b905256a

Cited by 122 publications

(103 citation statements)

References 29 publications

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“…The NiO nanoparticles reported here are near-stoichiometric with a wide band gap of ~4.4 eV and a deep valence band maximum at -6.22 eV. The valence band value is calculated from the reported electron affinity value for NiO [2][3][4]. It can be seen that the lifetime of QDs is quenched significantly when mixed with the NiO nanoparticles.…”

Section: Resultsmentioning

confidence: 99%

“…3 that for other smaller band gap QDs, the barrier to hole injections into the QDs is even lower or nonexistent. So far, the reported inorganic HTLs for QLED devices provide a very high barrier to QDs, thus reducing the efficiency [2][3][4]. On the other hand, NiO nanoparticles with a deeper valence band maximum are a potential HTL that can inject holes into the QDs of different sizes more efficiently.…”

Section: Resultsmentioning

confidence: 99%

“…The conduction band of the electron transport layers align with the conduction band of the QD and thereby reduce the barrier to electrons injected from the cathode, but there are not enough hole transport layers (HTLs) with suitable valence band alignment with the QDs. Even though some p-type materials are used as HTLs, the efficiency of the devices is much lower due to valence band mismatch [1,[2][3][4]. Non-stoichiometric nickel oxide (NiO) has been successfully employed as an HTL in quantum light emitting devices (QLEDs), but imbalance in the charge injection into the QDs created by the high barrier to holes resulted in low efficiency [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The charge transport layers facilitate the extraction of carriers in photovoltaic devices and injection of carriers in light emitting devices. In the case of light emitting devices, the charge transport layers reduce the barrier to holes and electrons that are injected from the electrode into the QD emissive layer [2][3][4]. Suitable inorganic electron transport layers reported so far are zinc oxide, titanium dioxide, and tin oxide, which are intrinsically n-type materials [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…In the case of light emitting devices, the charge transport layers reduce the barrier to holes and electrons that are injected from the electrode into the QD emissive layer [2][3][4]. Suitable inorganic electron transport layers reported so far are zinc oxide, titanium dioxide, and tin oxide, which are intrinsically n-type materials [1][2][3][4]. The conduction band of the electron transport layers align with the conduction band of the QD and thereby reduce the barrier to electrons injected from the cathode, but there are not enough hole transport layers (HTLs) with suitable valence band alignment with the QDs.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of charge transport between nickel oxide nanoparticles and CdSe/ZnS alloyed nanocrystals

et al. 2017

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Charge transport between nickel oxide nanoparticles and CdSe/ZnS alloyed core/shell nanocrystals is investigated. The crystal structure and composition of the nickel oxide nanoparticles are evaluated using X-ray diffraction, Raman and X-ray photoelectron spectroscopies. The nanoparticles are near-stoichiometric with very low defect densities. The optical properties of the materials are studied by measuring the absorbance and time resolved photoluminescence spectra. The band gap of the nickel oxide nanoparticles is around 4.42 eV. The CdSe/ZnS nanocrystals exhibit shorter average lifetimes when mixed with nickel oxide nanoparticle powder. The lifetime quenching can be attributed to the efficient charge transport from the CdSe/ZnS nanocrystals to nickel oxide nanoparticles due to the relative valence band alignment.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation of charge transport between nickel oxide nanoparticles and CdSe/ZnS alloyed nanocrystals

et al. 2017

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Quantum Dots for Displays and Solid State Lighting

Manders

Bera

Liu

et al. 2016

Materials for Solid State Lighting and Displays

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Low‐Temperature Solution‐Processed Transparent QLED Using Inorganic Metal Oxide Carrier Transport Layers

Liang

Yong

et al. 2021

Adv Funct Materials

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Quantum dot light‐emitting diodes (QLEDs) represent an exciting new technology that has many desirable attributes when compared to existing organic LEDs (OLEDs) including increased brightness, contrast, and response time. Solution‐based fabrication approaches have the advantage of being able to produce large‐area electronic systems at reduced costs and critical in applications such as large display fabrication and electronics on curved surfaces including low‐profile augmented reality glasses. In this paper, for the first time, a fully solution‐processed transparent inorganic QLED is described. Traditional QLED fabrication methodologies require the use of air‐sensitive materials that make fabrication of these devices challenging and expensive. Instead of using air‐sensitive organic materials, in the approach, nickel oxide (NiO) is used as the hole transport layer and is deposited using a sol‐gel method. Copper doping of the NiO to reduce the turn‐on voltage of the QLED device is investigated. Importantly, the post‐annealing temperature of the sol‐gel process is below 275 °C, which permits the fabrication of QLEDs on a wide range of substrates. The experimental results are concordant with the COMSOL simulation data and demonstrate the feasibility of fabricating fully transparent inorganic QLED devices using a solution‐based process.

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All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing

Cited by 122 publications

References 29 publications

Investigation of charge transport between nickel oxide nanoparticles and CdSe/ZnS alloyed nanocrystals

Investigation of charge transport between nickel oxide nanoparticles and CdSe/ZnS alloyed nanocrystals

Quantum Dots for Displays and Solid State Lighting

Low‐Temperature Solution‐Processed Transparent QLED Using Inorganic Metal Oxide Carrier Transport Layers

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