“…The presence of Zn, In, S, Cd, Cu, Co, and Fe effectively confirms the successful construction of the HES/ZIS-10 heterojunction, consistent with the results of EDS mapping. 31,32 33,34 For In 3d, the peaks at 452.18 and 444.68 eV are ascribed to In 3d 3/2 and In 3d 5/2 for ZIS, respectively, while the binding energies of In 3d for HES/ZIS-10 shift 0.1 eV to higher binding energies. 35,36 Similarly, the S 2p of ZIS is decomposed into two separated peaks at 162.68 and 161.48 eV, which are indexed to S 2p 1/2 and S 2p 3/2 , respectively.…”