2004
DOI: 10.1109/tmag.2004.832176
|View full text |Cite
|
Sign up to set email alerts
|

All-in-One Package Ultracompact Micropower Module Using Thin-Film Inductor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
5
0

Year Published

2006
2006
2018
2018

Publication Types

Select...
4
2
2

Relationship

0
8

Authors

Journals

citations
Cited by 17 publications
(5 citation statements)
references
References 4 publications
0
5
0
Order By: Relevance
“…As the design was set at 25 µm, it resulted in a higher inductor resistance than that of the design, especially for the 16-turn inductor with the maximum resistance deviation. However, the inductor fabricated as a high aspect ratio structure had low DC resistance, as expected, and its resistance can be ranked in the low-resistance group compared to literature that lists resistance in a range of 9 mΩ-4.6 Ω [3], [5]- [7], [10], [11], [16]- [19]. High-frequency characterization was performed using a vector network analyzer Agilent 8650ES, and one port scattering (S 11 ) measurement was conducted in the frequency range of 30 kHz to 1 GHz while the parasitic capacitance of the DUT pad and connector were de-embedded using the admittance matrix method [15].…”
Section: Resultsmentioning
confidence: 59%
See 1 more Smart Citation
“…As the design was set at 25 µm, it resulted in a higher inductor resistance than that of the design, especially for the 16-turn inductor with the maximum resistance deviation. However, the inductor fabricated as a high aspect ratio structure had low DC resistance, as expected, and its resistance can be ranked in the low-resistance group compared to literature that lists resistance in a range of 9 mΩ-4.6 Ω [3], [5]- [7], [10], [11], [16]- [19]. High-frequency characterization was performed using a vector network analyzer Agilent 8650ES, and one port scattering (S 11 ) measurement was conducted in the frequency range of 30 kHz to 1 GHz while the parasitic capacitance of the DUT pad and connector were de-embedded using the admittance matrix method [15].…”
Section: Resultsmentioning
confidence: 59%
“…. Inductance and resistance of fabricated inductors compared to literature values: [3], [5]- [7], [10], [11] and [16]- [19]: (a) inductance and resistance (b) inductance and conductivity per area…”
Section: Resultsmentioning
confidence: 99%
“…In an attempt to understand the trends in this rapidly evolving area, this paper presents an overview of the progress of the performance of the typical dc-dc converter platforms outlined above. The accompanying figures provide plots of data for a range of dc-dc converter platforms ranging from commercial power modules [7][8][9][10][11][12][13][14] and PwrSiP products [2][3][4][5][6] to PwrSiP and PwrSoC research demonstrators which have been reported in the recent literature [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Figure 3 compares the power densities of the different power converters including power modules, power supply in package (PwrSiP) and power supply on chip (PwrSoC).…”
Section: Roadmap For Dc-dc Power Convertersmentioning
confidence: 99%
“…Thin-film magnetic inductors are useful for integrated power delivery solutions for microprocessors and mobile devices [1] [2]. In recent years, with the rapid development of MEMS fabrication technology, specially the Quasi LIGA processing technology based on the 3D non-silicon materials becomes one of the most advanced technologies to study on micro-inductive device.…”
Section: Introductionmentioning
confidence: 99%