Abstract:In this paper, a novel all-high-K metal gate (HKMG)-bounded silicon-controlled rectifier (AHBSCR) is proposed for advanced electrostatic discharge (ESD) protection in FinFET processes. Depart from its prior arts, in AHBSCR, both the main SCR path and the triggering diode path are placed along the Fin direction, and all active areas are bounded by HKMG, thus expressing superior conduction capability under various ESD stresses and a more compact silicon footprint. Experimental results show that the proposed AHBS… Show more
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