2021
DOI: 10.1063/5.0047534
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All-epitaxial guided-mode resonance mid-wave infrared detectors

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Cited by 36 publications
(9 citation statements)
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“…45 and 27% peak external quantum efficiencies were achieved for the two devices, respectively. In 2021, Kamboj et al (2021) in the D. Wasserman’s group also reported a fully epitaxially guided mode resonant mid-wave IR type II superlattice nBn photodetector consisting of a high refractive index absorber/waveguide layer, a low refractive index semiconductor absorber layer and a heavily doped reflector layer. The experimental results show that the absorption is strongly enhanced at the wavelengths coupled to the guided mode resonance.…”
Section: Current Status Of Research In Micro-nano Opticsmentioning
confidence: 99%
“…45 and 27% peak external quantum efficiencies were achieved for the two devices, respectively. In 2021, Kamboj et al (2021) in the D. Wasserman’s group also reported a fully epitaxially guided mode resonant mid-wave IR type II superlattice nBn photodetector consisting of a high refractive index absorber/waveguide layer, a low refractive index semiconductor absorber layer and a heavily doped reflector layer. The experimental results show that the absorption is strongly enhanced at the wavelengths coupled to the guided mode resonance.…”
Section: Current Status Of Research In Micro-nano Opticsmentioning
confidence: 99%
“…Since the periodicity of the GMR structure itself is much smaller than the wavelength of interest, we expect to see only specular reflection in the considered wavelength range ( 37 ). We note that the linewidth of the resonance created by the GMR structure is sensitive to both the patterned area widths (Λ/2) and the scattering rate of the n -InAs underneath ( 38 ).…”
Section: Resultsmentioning
confidence: 96%
“…Free-carrier induced reduction in the refractive index has long been known and leveraged in plasmon-enhanced waveguides for quantum cascade lasers [28], as well as more recently in ultra-thin guided mode resonance detectors. [29] Here, we explore the viability of highly-doped semiconductors as low-index layers in DBRs for MWIR, GaSb-based devices. We show theoretically that the reduction in the refractive index yields high reflectance DBRs with reduced thickness in comparison to AlAsSb/GaSb DBRs.…”
Section: Introductionmentioning
confidence: 99%