All-Electrical Detection of the Relative Strength of Rashba and Dresselhaus Spin-Orbit Interaction in Quantum Wires

Scheid, Matthias; Kohda, Makoto; Kunihashi, Yoji; Richter, Klaus; Nitta, Junsaku

doi:10.1103/physrevlett.101.266401

Cited by 85 publications

(96 citation statements)

References 28 publications

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“…3,[18][19][20] Moreover, the MPGE has been applied to investigate the interplay of Rashba and Dresselhaus spin splittings, 11,21 which is in the focus of the current research and studied by various optical and transport methods. [22][23][24][25][26][27][28][29][30][31] Here we report on experiments which allow us to distinguish unambiguously between the spin-dependent and orbital origins of the MPGE by investigating the qualitative difference in their behavior upon a variation of the g * factor. We use the fact that the electric current resulting from the spin-related roots is proportional to the Zeeman band spin splitting in contrast to the one due to orbital mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

et al. 2011

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We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé factor g * depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most QW widths, the MPGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g * factor. In structures with a vanishingly small g * factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.

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Section: Introductionmentioning

confidence: 99%

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

et al. 2011

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“…Thus, the measurement of the TAHE voltages V x and V y could be used as a tool for the experimental determination of the ratio α=β, which although previously measured in quantum wells [34] and quantum wires [35] has not yet been measured in tunneling systems. Apart from the TAHE, the spin-dependent momentum filtering also generates a transverse spin current in the nonmagnetic electrode.…”

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confidence: 99%

Tunneling Anomalous and Spin Hall Effects

Matos-Abiague

Fabian

2015

Phys. Rev. Lett.

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We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems. The anomalous Hall effect (AHE) occurs in solids as the result of the interplay between spin-orbit coupling (SOC) and magnetism [1]. Although this fascinating phenomenon has been investigated for more than a century, its complexity and rich phenomenology continue to attract the attention of many researchers. The topic has been extensively discussed in various reviews [2][3][4][5].Most of the investigations of the AHE have been focused on the case of lateral transport in magnetic crystals and films. However, recent theoretical investigations explored the possible existence of anomalous Hall currents due to the side-jump and skew-scattering of spin-polarized electrons on impurities located in the insulating barrier of a ferromagnet-insulator-ferromagnet magnetic tunnel junction (MTJ) [6]. In this Letter we propose an effect which does not rely on scattering on impurities but on the interfacial SOC resulting from the lack of inversion symmetry of the MTJ. The effect can be used for experimentally proving and quantifying the interfacial SOC in metallic and metalsemiconductor systems. This is of particular relevance because the interfacial SOC is crucial for various modern phenomena in solids, e.g., anisotropies in optical [7] and magnetotransport phenomena such as the tunneling anisotropic magnetoresistance (TAMR) effect [8][9][10][11][12][13][14][15], as well as for the formation of Majorana fermions in ferromagnetic-atomic-chains-superconductor systems [16]. The interfacial SOC has also been proposed for controlling thermoelectric anisotropies in magnetic [17] and helimagnetic [18] tunnel junctions and for generating SOC-induced spin transfer torque in ferromagnet-normal-metal [19] and in topological-insulator-ferromagnet structures [20].We show theoretically that, when a current flows through a MTJ with a single ferromagnetic electrode, finite anomalous Hall conductances develop in the nonmagnetic counterelectrode, even in the absence of impurities. Since this effect originates from the skew tunneling [21...

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“…(1), and renormalized Dresselhaus termhσ In a second, complementary, transport experiment we measured the quantum correction to the magnetoconductivity in the gated Hall bar structures in the presence of an external magnetic field B, pointing perpendicularly to the QW plane. 31 At T = 1.4 K, various magnetoconductivity profiles were recorded for different strengths of the Rashba SOI by varying the gate voltage V g .…”

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Gate-controlled persistent spin helix state in (In,Ga)As quantum wells

et al. 2012

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In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, α and β, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine a ratio α/β 1 for nongated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magnetotransport experiment, we monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH-type state. A corresponding numerical analysis reveals that such a PSH-type state indeed prevails even in presence of strong cubic SOI, however no longer at α = β. An electron moving in an electric field experiences, in its rest frame, an effective magnetic field pointing perpendicularly to its momentum. The coupling of the electron's spin to this magnetic field is known as spin-orbit interaction (SOI). The ability to control the corresponding magnetic field, and thereby spin states, all electrically in gated semiconductor heterostructures 1,2 is a major prerequisite and motivation for research towards future semiconductor spintronics. However, on the downside, the momentum changes of an electron moving through a semiconductor cause sudden changes in the magnetic field leading to spin randomization. Hence, suppression of spin relaxation in the presence of strong, tunable SOI is a major challenge of semiconductor spintronics.In III-V semiconductor heterostructures two different types of SOI exist: (i) Rashba SOI, 3 originating from structure inversion asymmetry (SIA), is linear in momentum k with a strength α that can be controlled by an electric gate.(ii) Dresselhaus SOI 4 is due to bulk inversion asymmetry (BIA), which gives rise to a band spin splitting, given by k-linear and k-cubic contributions. 5 The strength of the linear in k term β = γ k 2 z (where γ is a material parameter) can hardly be changed as it stems from crystal fields. These various spin-orbit terms in layered semiconductors are described by the Hamiltonian H SO = H R + H D with Rashba and Dresselhaus termswith σ x ,σ y the Pauli spin matrices. 7 If the k-cubic terms can be neglected, a special situation emerges if Rashba and Dresselhaus SOI are of equal strength: α = ±β.Then spin relaxation is suppressed. 8,9 A collinear alignment of Rashba and Dresselhaus effective magnetic fields gives rise to spin precession around a fixed axis, leading to spatially periodic modes referred to as persistent spin helix (PSH) and reflecting the underlying SU (2) symmetry in this case. 10The PSH is robust against all forms of spin-independent scattering. This favorable situation where spin relaxation is suppressed while the spin degree of freedom is still susceptible to electric...

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All-Electrical Detection of the Relative Strength of Rashba and Dresselhaus Spin-Orbit Interaction in Quantum Wires

Cited by 85 publications

References 28 publications

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

Tunneling Anomalous and Spin Hall Effects

Gate-controlled persistent spin helix state in (In,Ga)As quantum wells

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