All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

Zhang, J.-R.; Rupakula, Maneesha; Bellando, Francesco; Cordero, E. Garcia; Longo, Johan; Wildhaber, Fabien; Herment, Guillaume; Guérin, Höel; Ionescu, Adrian M.

doi:10.1109/iedm.2018.8614668

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…Compared to the sensors based on surface plasmon resonance, quartz crystal microbalance, chemiluminescence, and chromatography, ISFETs are considered as the most promising sensors for building lab-on-a-chip platforms because of their compatibility with CMOS technology, which facilitates low cost through mass production while ensuring their portability and robustness . This allowed to develop a large-area ISFET-based biosensor array capable of detecting different biomaterials on the chip surface, which is suitable for the POC clinical diagnostics. − …”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive Coplanar Dual-Gate ISFETs for Point-of-Care Biomedical Applications

Jeon

Cho

2020

ACS Omega

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The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited by the Nernst equation, which is not sufficient for detecting weak biological signals. In this study, we propose a silicon-on-insulator-based coplanar dual-gate (Cop-DG) ISFET pH sensor, which exhibits better performance than the conventional ISFET pH sensor. The Cop-DG ISFETs employ a Cop-DG consisting of a control gate (CG) and a sensing gate (SG) with a common gate oxide and an electrically isolated floating gate (FG). As CG and SG are capacitively coupled to FG, both these gates can efficiently modulate the conductance of the FET channel. The advantage of the proposed sensor is its ability to amplify the sensitivity effectively according to the capacitive coupling ratio between FG and coplanar gates (SG and CG), which is determined by the area of SG and CG. We obtained the pH sensitivity of 304.12 mV/pH, which is significantly larger than that of the conventional ISFET sensor (59.15 mV/pH, at 25 °C). In addition, we measured the hysteresis and drift effects to ensure the stability and reliability of the sensor. Owing to its simple structure, cost-effectiveness, and excellent sensitivity and reliability, we believe that the Cop-DG ISFET sensor provides a promising point-of-care biomedical applications.

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Section: Introductionmentioning

confidence: 99%

Ultrasensitive Coplanar Dual-Gate ISFETs for Point-of-Care Biomedical Applications

Jeon

Cho

2020

ACS Omega

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“…where ∆φ S is the perturbation on the surface potential (see Fig. 2) and ζ 1 is a N ×N matrix containing the charge valence of ion species A 1 (in units of elementary charges) in the same cells where matrix A 1 has non-null elements 4 . Inserting Eq.…”

Section: A the Total Surface Admittancementioning

confidence: 99%

“…It is worth noting that the numerical implementation of the matrix Θ may lead to undetermined/infinite elements values 4 For example, for the generic reaction r ij shown in Eq. 9, these new matrices would be…”

Section: A the Total Surface Admittancementioning

confidence: 99%

General Model and Equivalent Circuit for the Chemical Noise Spectrum Associated to Surface Charge Fluctuation in Potentiometric Sensors

2021

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This paper firstly reports a general and powerful approach to evaluate the power spectral density (PSD) of the surface charge fluctuations, so-called "chemical noise", from a generic set of reactions at the sensing surface of potentiometric sensors such as, for instance, Ion-Sensitive Field Effect Transistors (ISFETs). Starting from the master equation, the spectral noise signature of a reaction set is derived as a function of the reaction kinetic parameters and of the interface concentration of the ionic species. Secondly, we derive an equivalent surface admittance, whose thermal noise PSD produces a noise PSD equal to that of the surface charge fluctuations. We also show how to expand this surface admittance into staircase RC networks, with a number of elementary cells equal to the number of surface reactions involved. This admittance can be included in circuit simulations coupled with a SPICE compact model of the underlying FET, to enable the physically based modelling of frequency dispersion and noise of the sensing layer when simulating the sensor and the read-out. Validation with existing models and literature results as well as new application examples are provided. The proposed methodology to compute the PSD from rate equations is amenable to use in different contexts where fluctuations are generated by random transitions between discrete states with given exchange rates.

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“…A common approach for short design-to-product time is through packaging the sensors with the readout and control electronics in a printed circuit board (PCB) [2]. However, such systems are difficult to address the requirements of cost, form factor and power, though a certain flexibility can be achieved by assembling components on a flexible PCB [3,4].…”

Section: Introductionmentioning

confidence: 99%

Printable Low Power Organic Transistor Technology for Customizable Hybrid Integration Towards Internet of Everything

Huang

Tang

Feng³

et al. 2020

IEEE J. Electron Devices Soc.

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A highly customizable hybrid sensor system, composed of a silicon integrated circuit (IC) chip and an organic field effect transistor (OFET) transducer, is proposed for Internet of Everything (IoE). In such a system, the silicon IC chip performs high performance and complex signal processing, and the OFET transducer provides flexible or conformable large area coverage and more friendly interfaces to integrate different sensing materials. A low trap-state density OFET (LTDOFET) technology is developed for such a hybrid system, owning features of low-cost solution printing processes, low operation voltage and excellent operational stability. This technology has been implemented with various materials and processes, indicating its generality. Several sensor applications built based on this device technology are also reviewed, proving the LTDOFET technology would be promising for highly customizable sensor systems towards the IoE era.

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All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na⁺, K⁺, Ca²+) sensing

Cited by 10 publications

References 11 publications

Ultrasensitive Coplanar Dual-Gate ISFETs for Point-of-Care Biomedical Applications

Ultrasensitive Coplanar Dual-Gate ISFETs for Point-of-Care Biomedical Applications

General Model and Equivalent Circuit for the Chemical Noise Spectrum Associated to Surface Charge Fluctuation in Potentiometric Sensors

Printable Low Power Organic Transistor Technology for Customizable Hybrid Integration Towards Internet of Everything

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