Abstract:Alteration of transport properties of any material, especially
metal oxides, by doping suitable impurities is not straightforward
as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role in controlling the
resistive switching (RS) performance of metal oxide-based memory devices.
Therefore, a judicious choice of dopants and their atomic concentrations
is crucial for achieving an optimum Vo configuration. Here,
we show that the rational designing of RS memory device… Show more
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