AlInGaAs Multiple Quantum Well-Integrated Device with Multifunction Light Emission/Detection and Electro-Optic Modulation in the Near-Infrared Range

Abstract

A monolithic photonic chip with multifunctional light emission/detection and electro-optic modulation capabilities in the near-infrared range is proposed and realized on an InP-based wafer. Two identical AlInGaAs multiple quantum well (MQW) diodes operating independently as light emission/detection devices are fabricated using a two-step etching process on a single wafer and connected via a straight waveguide. The photocurrent induced in the MQW diode for the detection process is generated by the infrared light emitted by the MQW diode during the emission process and transmitted via the straight waveguide. The MQW diode has an electro-optic modulation characteristic, and its spectral responsivity exhibits a blueshift with an increasingly negative bias voltage under external infrared laser excitation. An on-chip communication test is conducted to study the potential applications of the proposed monolithic photonic chip for transmission of optical signals in the near-infrared range.

AlInGaAs MQW Transceiver with Electro-optic Modulation Characteristics for Free-Space Optical Communication and Sensing

“…Based on the coexistence of luminescence and detection properties in MQWs, integrated photonic chips with a light source, a waveguide, and a photodetector have been realized on GaN-based wafers with MQWs for full-duplex communication in the visible range in our previous work. − We also proposed a monolithic photonic chip with multifunction light emission/detection and electro-optic modulation capabilities in the near-infrared range . In this work, we further study an AlInGaAs MQW transceiver with electro-optic modulation characteristics for free-space optical communication and sensing applications over a broad spectral range.…”

“… 23 − 26 We also proposed a monolithic photonic chip with multifunction light emission/detection and electro-optic modulation capabilities in the near-infrared range. 27 In this work, we further study an AlInGaAs MQW transceiver with electro-optic modulation characteristics for free-space optical communication and sensing applications over a broad spectral range. Two identical AlInGaAs MQW diodes are prepared to perform light emission/detection/modulation on a single wafer.…”

MBE-Grown Hybrid Axial Core–Shell n-i-p GaAsSb Heterojunction Ensemble Nanowire-Based Near-Infrared Photodetectors up to 1.5 μm

“…Among the range of zero-dimensional (0D) and one-dimensional (1D) near-infrared photodetector (NIRPD) nanostructures, namely, axial and core–shell (C–S) nanowires (NWs), , quantum well, quantum dot, quantum wire, quantum dash, nanopillars, nanorods, , and nanotubes, which have been demonstrated, the interest has shifted more toward III–V-based semiconductor NWs owing to their superior characteristics, such as high absorption coefficient, high carrier mobility, direct and widely tunable bandgap, ease of heterostructure formation, and bandgap engineering. Further, the one-dimensional (1D) geometry of NW enables monolithic integration of III–V semiconductor-based photonic devices on the Si platform, which boosts the bandwidth of the light communication and also provides low-cost CMOS technology …”

“…In the last decade, infrared photodetectors (IRPDs) have been extensively studied due to their rapidly expanding broad spectrum of application fields from defense to civilians, namely, nondestructive process control, earth observation, medical imaging, industry defect imaging, light detection, and ranging (LIDAR) scanning system for autonomous vehicles and exoplanet exploration defense and security (military missile tracking and laser warning detectors). 1 Among the range of zero-dimensional (0D) and onedimensional (1D) near-infrared photodetector (NIRPD) nanostructures, namely, axial and core−shell (C−S) nanowires (NWs), 2,3 quantum well, 4 quantum dot, 5 quantum wire, 6 quantum dash, 7 nanopillars, 8 nanorods, 9,10 and nanotubes, 11 which have been demonstrated, the interest has shifted more toward III−V-based semiconductor NWs owing to their superior characteristics, such as high absorption coefficient, high carrier mobility, direct and widely tunable bandgap, ease of heterostructure formation, and bandgap engineering. Further, the one-dimensional (1D) geometry of NW enables monolithic integration of III−V semiconductor-based photonic devices on the Si platform, which boosts the bandwidth of the light communication and also provides low-cost CMOS technology.…”