AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE

Brown, April S.; Mishra, Umesh K.; Chou, C.S.; Hooper, C.; Melendes, M.A.; Larson, L.E.; Rosenbaum, S. E.; Delaney, M.J.

doi:10.1109/55.43141

Cited by 80 publications

(16 citation statements)

References 9 publications

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“…Experimental results have confirmed that the kink effect has a complex behavior: it starts to decrease at low frequencies (10-100 Hz) and is absent at higher frequencies [7], [8]. It can be suppressed using low-temperature buffers [6] or using silicon nitride passivation [9], it disappears when the device is heated [7] and there is a correlation between impact ionization and the kink effect [10]. Composite InGaAs/InP/InAlAs FET's are especially sensitive to kink effects and to frequency dispersion of drain conductance [11].…”

supporting

confidence: 71%

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New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

Georgescu

Souifi

et al. 1998

IEEE Electron Device Lett.

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The kink effect in InAlAs/InGaAs/InP composite channel heterojunction field effect transistors (HFET's) was investigated as a function of temperature and optical excitation. Drain source and gate current measurements show that above 325 K the kink effect disappears while the impact ionization process is still present. The kink at low temperatures is suppressed by illumination with photons of energy above 1 eV. These results prove that this parasitic effect is mainly related to the presence of traps in the top layers.

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supporting

confidence: 71%

“…Some authors suggested that impact ionization is responsible for this effect [4], [5], while others attributed the kink effect to traps [3], [6]. Experimental results have confirmed that the kink effect has a complex behavior: it starts to decrease at low frequencies (10-100 Hz) and is absent at higher frequencies [7], [8].…”

supporting

confidence: 55%

New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

Georgescu

Souifi

et al. 1998

IEEE Electron Device Lett.

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“…The physical origin of the kink is an issue of considerable contention at this time. Conventional wisdom has attributed the kink effect to traps or their interaction with high-fields or impact ionization (II) [1]- [3]. Recently, simulations [4] as well as light emission, channel-engineering and body contact experiments [5]- [7] have suggested a link between impact ionization and the kink.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Ernst

Somerville

Alamo

1997

IEEE Electron Device Lett.

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Abstract-We have carried out pulsed measurements of the kink effect in InAlAs/InGaAs HEMT's on InP with nanosecond resolution. Our measurements show that the kink's characteristic time constant is strongly dependent on VDS, i.e., it drops by more than three decades, from 100 s down to 50 ns, between low and high values of V DS : This suggests that the kink should not be operational for frequencies in the microwave and millimeter wave regimes. We also find that the kink turn-on dynamics correlate with impact ionization. In particular, the inverse of the kink's characteristic time constant follows a classical impact ionization behavior.

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“…15 Regardless of origin, the kink effect is a result of hole accumulation in the body near the source region of the transistor; this is exacerbated in the presence of defects, which have been shown to enhance the kink via hole-trap charging. 16 In Fig. 3͑d͒, we observed tiny surface imperfections under high magnification ͑400ϫ͒.…”

mentioning

confidence: 91%

High electron mobility transistors on plastic flexible substrates

Chen

Alford

Kuech

et al. 2011

Applied Physics Letters

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The double-flip transfer of indium phosphide ͑InP͒ based transistors onto plastic flexible substrates was demonstrated. Modulation doped field effect transistor layers, epitaxially grown on InP bulk substrates, were transferred onto sapphire using a masked ion-cutting process. Following layer transfer, transistors were fabricated at low temperatures ͑Յ150°C͒. The device structure was then bonded to flexible substrate, and laser ablation was used to separate the initial bond. The transferred transistors were characterized and exhibited high field-effect mobility ͑ average ϳ 2800 cm 2 V −1 s −1 ͒.Due to bendability, toughness, and light weight, flexible substrates can be useful in a wide variety of applications such as smart clothing, energy panels, biosensors, and flexible displays. 1 To form circuit elements in these applications, thin film transistors are required. Amorphous silicon and organic semiconductors are commonly used because their low deposition temperatures are compatible with plastic substrates such as polyethylene naphthalate ͑PEN͒, which has temperature tolerance Ͻ200°C. 2 The low carrier mobility of these materials ͑typically Ͻ10 cm 2 V −1 s −1 ͒; however, limits their potential for use in high-speed applications. 3,4 Ion-cutting has proven useful for integration of singlecrystal semiconductors with alternative substrates at various temperatures, depending on implant and annealing conditions. 5 Ion-cutting involves proton ͑H + ͒ implantation, at high doses ͑ϳ10 17 cm −2 ͒ into a donor, followed by wafer bonding of the donor to an acceptor substrate. Upon annealing, the hydrogen segregated to the implantation-induced damage region nucleate into gas bubbles, resulting in thinfilm layer separation onto the acceptor. 6 A key benefit to ion-cutting is that the donor can be reused after the process.Recently, indium phosphide ͑InP͒ transfer onto flexible substrate was demonstrated in a double-flip process involving ion-cutting and adhesive bonding. 7 A major drawback to the process is that the implantation damage leads to electrically active defects which are difficult to eliminate. Bulk characteristics cannot be fully restored even after annealing to 600°C. 8 In previous experiments, we have shown that devices fabricated on ion-cut InP layers either function with undesired characteristics ͑photodetectors͒ or do not function at all ͑transistor͒. 9,10Masked ion-cutting can mitigate implantation damage by protecting critical regions from impinging ions with a thick, removable mask. 11 These protected areas are transferred along with adjacent implanted areas during exfoliation. In the masked ion-cutting of ͑100͒ InP, protected areas transfer with pyramidal protrusions associated with the exfoliation process, which can be removed following transfer. 12 In this letter, we used masked ion-cutting in a double-flip transfer to enable integration of InP-based high electron mobility transistor ͑HEMTs͒ on PEN substrates.Modulation doped field effect transistor ͑MODFET͒ layers were grown on InP via metal organic vap...

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AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE

Cited by 80 publications

References 9 publications

New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

Dynamics of the kink effect in InAlAs/InGaAs HEMTs

High electron mobility transistors on plastic flexible substrates

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