AlInAs/GaInAs HBT IC technology

Jensen, J.F.; Stanchina, W.E.; Metzger, Robert A.; Rensch, D.B.; Lohr, R.F.; Quen, R.W.; Pierce, M.W.; Allen, Y.K.; Lou, Pang-Yen

doi:10.1109/4.75028

Cited by 40 publications

(9 citation statements)

References 13 publications

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“…These transistors can have cutoff frequencies (fT) and maximum oscillation frequencies (fma) of 90 GHz and 70 GHz, respectively [6]. However, in order to allow optical access to the device active region, an 8x8 prn emitter window was included which significantly reduced the frequency performance of the device.…”

Section: Methodsmentioning

confidence: 99%

60 GHz sources using optically driven HBTs

Scott¹,

Plant²,

Fetterman³

1992 IEEE Microwave Symposium Digest MTT-S

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photodetectors integrated with planar twin-dipole antenna structures to generate 60 GHz radiation. Our initial efforts employed two cw lasers in a mixing configuration to demonstrate proof of principle. In subsequent experiments, a mode locked semiconductor laser was substituted for the mixing system to produce a compact and highly stable transit time device (mode locked laser) and a high Millimeter wave sources at 60 GHz have been demonstrated using optically driven heterojunction bipolar transistors configured as photodetectors. Two millimeter waves; the mixing of two cw lasers and were used to optically generate the radiation source [4,5]. This combination of an optical the mode locking Of a semiconductor laser' The speed phototransistor (HBT) defines a new type of optoelectronic millimeter wave source which can be wave power generated from these distributed to form novel coherent arrays. configurations was radiated into free-space using integrated planar twin dipole antennas and heterodyne detected with signal to noise ratios > 40 dB. As part of these experiments, the DC optical gain and quantum efficiency of the HBT photodetectors was determined.

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Section: Methodsmentioning

confidence: 99%

60 GHz sources using optically driven HBTs

Scott¹,

Plant²,

Fetterman³

1992 IEEE Microwave Symposium Digest MTT-S

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“…The devices were modeled after the HRL Laboratories InGaAs-InP HBT process [10], [11]. A cross section of the modeled HBT is shown in Fig.…”

Section: A Device Characterizationmentioning

confidence: 99%

“…4, where the top AlInAs layers are the emitter, p-type InGaAs layers are the base, and n-type InGaAs layers are the collector and subcollector and an InP substrate. Mobility, bandgap, lifetimes, band alignment, and velocity parameters were obtained from various references for the HRL HBT process [10], [11]. The ATLAS model included Shockley-Read-Hall, optical, and Auger recombination.…”

Section: A Device Characterizationmentioning

confidence: 99%

SEE analysis of digital InP-based HBT circuits at gigahertz frequencies

Weatherford

Schiefelbein²

2001

IEEE Trans. Nucl. Sci.

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“…The examined circuit is a high-speed, InP heterojunction bipolar transistor (HBT) frequency divider [20]. The circuit provides a differential divide-by-four output based on a differential input clock and is nominally designed to operate at 3.5 GHz.…”

Section: A Device-under-testmentioning

confidence: 99%

Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe

David

Yun

Crites

et al. 1998

IEEE Trans. Microwave Theory Techn.

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Abstract-A measurement system for internal node testing of integrated circuits using a micromachined photoconductive sampling probe is described and characterized. Special emphasis is placed upon the system performance, demonstrating how absolute voltage measurements are achieved in a dc-to-mm-wave bandwidth. The feasibility of the setup is illustrated using an InP heterojunction bipolar transistor frequency divider. Detailed waveforms at different circuit nodes and the corresponding propagation delays from within this circuit at operating frequencies up to 10 GHz are presented. The results demonstrate for the first time the use of photoconductive probes for calibration-free, absolute-voltage, dc-coupled potential measurements in highfrequency and high-speed integrated circuits.

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AlInAs/GaInAs HBT IC technology

Cited by 40 publications

References 13 publications

60 GHz sources using optically driven HBTs

60 GHz sources using optically driven HBTs

SEE analysis of digital InP-based HBT circuits at gigahertz frequencies

Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe

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