Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Yang, Yajun; Meng, Guowen; Liu, Xianyun; Zhang, Lide; Hu, Zheng; He, Chengyu; Hu, Yemin

doi:10.1021/jp809359v

Cited by 80 publications

(51 citation statements)

References 51 publications

(82 reference statements)

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“…In a later study [7], the field-emitting properties of oriented SiC nanowire arrays were excellent, with a lower turn-on field (0.7-1.5 V/μm), a lower threshold field (2.5-3.5 V/μm), and remarkable electron-emitting stability (24 hr of continuous operation). Excellent stability of SiCNW-based emitters has been also demonstrated in the study of Yang et al [75]. No obvious degradation of the current density (0.57 mA cm -2 ) was observed over 1200 min at an applied voltage value of 3000 V. Spanakis et al [76] presented results of the attempt to produce arrays of sharp SiC electron emitters by ultraviolet pulsedlaser processing of single-crystal SiC surfaces.…”

Section: Field Emission Cathodesmentioning

confidence: 75%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

177

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Abstract. SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in the different sections of the present paper.

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Section: Field Emission Cathodesmentioning

confidence: 75%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

177

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“…In the drying zone, when the solvent evaporated from the solution mixtures, the structuredirecting agents formed a micellar rod and self-assembled into a hexagonal array where the silicon particles were trapped in the voids, forming silicon walls [37e39]. In the heating zone, the structure-directing agents were removed, forming a highlyordered hexagonal arrangement of mesopores, and the resulting mesoporous Si sphere frames were converted to micro and mesoporous SiC spheres by the carbonization using ethanol as the carbon source [40].…”

Section: Resultsmentioning

confidence: 99%

Hierarchical porous silicon carbide with controlled micropores and mesopores for electric double layer capacitors

Kim

2015

Journal of Power Sources

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“…14 Previously, in depth investigations into the growth of various SiC nanostructure morphology and tailoring the bandage to lower the field emission properties have been carried out. For example, Yang et al 15 reported oriented SiC porous nanowire arrays grown at 1350 • C and obtained a turn-on field of 2.3-2.9 V/µm. Chen et al 16 reported that N doped SiC quasi aligned nanoarrays exhibited outstanding field emission properties with low turn-on field of 1.90-2.65 V/µm and threshold fields of 2.53-3.51 V/µm, respectively.…”

Section: Introductionmentioning

confidence: 99%

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Cui

Chen

et al. 2017

AIP Advances

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In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm) and threshold field (∼3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

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Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Cited by 80 publications

References 51 publications

SiC nanowires: material and devices

SiC nanowires: material and devices

Hierarchical porous silicon carbide with controlled micropores and mesopores for electric double layer capacitors

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

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