Algorithms for the rapid simulation of Rutherford backscattering spectra

Doolittle, Lawrence

doi:10.1016/0168-583x(85)90762-1

Cited by 2,748 publications

(496 citation statements)

References 3 publications

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“…The interdiffusion between YBCO and PBCO layers was investigated by SAM, RBS, and SIMS. Analysis of the RBS spectra was done by the RUMP computer code [ 5 ], implemented on a 80386/80387 PC. The results of SAM were analysed using the ESAU program implemented on a PDP 11 computer controlling the Phi Multiprobe 600 systems [ 6 ].…”

Section: Methodsmentioning

confidence: 99%

Epitaxial multilayers of YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox

Gao

Aarnink

Gerritsma

et al. 1991

Physica C: Superconductivity

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Heteroepitaxial multilayers of YBa2Cu3OJPrBa2Cu3Ox/YBa2Cu30x have been made by sputtering. No degradation of the transition temperature and the critical current density due to the presence of the PrBa2Cu3Ox layer could be observed. By using high-resolution transmission electron microscopy the atomic details of the interfaces and the defect structures have been studied. These films showed a perfectly stacked lattice just above the interface between film and substrate. The orientation of the c-axis perpendicular to the substrate was fairly perfect. The structural faults are mainly distributed in the middle and overlying layers. The dominant defects in our films seems to be stacking faults which give rise to nano-sized coherent anti-phase domains with the 1-2-3 structure. Rutherford backscattering spectroscopy, secondary ion mass spectroscopy, and scanning Auger microscopy were used to examine the interdiffusion between layers. Within the experimental resolution of 7 nm no interdiffusion is visible between YBa2Cu3Ox and PrBa2Cu3Ox layers.

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Section: Methodsmentioning

confidence: 99%

Epitaxial multilayers of YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox

Gao

Aarnink

Gerritsma

et al. 1991

Physica C: Superconductivity

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“…The experimental data were simulated with the RUMP program assuming fully dense films [18]. Within the measurement accuracy, RBS showed that the film thickness had little dependence on substrate temperature (above 200 ºC) and substrate bias.…”

Section: Introductionmentioning

confidence: 99%

Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

Sillassen¹,

Eklund²,

Pryds³

et al. 2010

Solid State Ionics

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Cubic yttria-stabilized zirconia (YSZ) films with yttria concentrations of 8.7, 9.9, and 11 mol% have been deposited by reactive pulsed DC magnetron from Zr-Y alloy targets. The overall microstructure and texture in the films showed no dependence on the yttria -concentration. Films deposited at floating potential had a <111> texture. Single -line profile analysis of the 111 X-ray diffraction peak yielded a grain size of ~18 nm and a microstrain of ~2%, regardless of deposition temperature. Films deposited at 400 ºC and selected bias voltages in the range from -70 V to -200 V showed a reduced grain size for higher bias voltages, yielding a grain size of ~ 7 nm and a microstrain of ~2.5% at a bias voltage of -200 V with additional incorporation of argon.Furthermore, the effect of impurities on the ionic conductivity has been investigated, since Hf impurities were found in the samples with yttria concentrations of 8.7, and 9.9 mol%. Temperaturedependent impedance spectroscopy of the YSZ films, deposited at 400 ºC and floating potential, showed no variation of the in-plane ionic conductivity with yttria concentration. However, for films 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 2 deposited at 400 ºC and a bias -70 V, the in-plane ionic conductivity decreased systematically for samples with yttria concentrations of 8.7 and 9.9 mol% compared to the sample with 11 mol% yttria. This suggests that ionic conduction is not a purely bulk mechanism, but mainly related to the grain boundaries. The activation energy for oxygen ion migration was determined to be between 1.25 and 1.32 eV. Manuscript Click here to view linked References

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“…The experimental data were simulated with the RUMP program [14], from which film thicknesses were obtained using an empirical film density. From a cautious estimate based on thicknesses obtained from RBS and XSEM (cross section), the films are roughly 10% less dense than their bulk counterparts.…”

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confidence: 99%

Concentration-dependent ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline scandia-stabilized zirconia

et al. 2010

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Nanocrystalline (nc) scandia-stabilized zirconia (SSZ) electrolytes with scandia contents of 5.9 to 15.9 mol% were synthesized by reactive magnetron sputtering. For scandia content ≥ 9.1 mol%, the as-deposited films were pure cubic phase with <111> texture, while traces of tetragonal phase was found for lower Sc content. Single-line profile analysis of the 111 X-ray diffraction peak yielded an out-of-plane grain size of ~10 nm and a microstrain of 2.0-2.2%, regardless of scandia content, for films deposited at 400 °C and a bias of -70 V. Films deposited at higher bias voltages showed a reduced grain size, yielding a grain size of ~6 nm and a microstrain of ~2.5% at -200 V and -250 V with additional incorporation of argon. Temperature-dependent impedance spectroscopy of the SSZ films showed that the in-plane ionic conductivity had a maximum close to 10.7 mol% and decreased almost an order of magnitude as the scandia -content was increased to 15.9 mol%. The activation energy for oxygen ion migration was determined to be between 1.30 -1.43 eV. In addition, no 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 2 dependence on grain size was observed. The above observations suggest a bulk mechanism for ionic conduction. *Manuscript Click here to view linked References

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Algorithms for the rapid simulation of Rutherford backscattering spectra

Cited by 2,748 publications

References 3 publications

Epitaxial multilayers of YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox

Epitaxial multilayers of YBa2Cu3Ox/PrBa2Cu3Ox/YBa2Cu3Ox

Effects of dopant concentration and impurities on the conductivity of magnetron-sputtered nanocrystalline yttria-stabilized zirconia

Concentration-dependent ionic conductivity and thermal stability of magnetron-sputtered nanocrystalline scandia-stabilized zirconia

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