AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer

Xie, Feng; Yan, Ruitao; Wang, R.; Bao, Chunxiong; Wang, J.

doi:10.1007/s00339-021-04608-4

Cited by 3 publications

(4 citation statements)

References 20 publications

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“…The avalanche breakdown voltage of the conventional APD is 73.1 V, and the maximum avalanche multiplication gain is 6.7 × 10 4 . While the avalanche breakdown voltage of the designed APD with gradually doped charge layer reduces to 66.6 V, and the maximum avalanche multiplication gain is 9.26 × 10 4 which is higher than the gain of 6.11 × 10 4 reported by Xie et al 12 Obviously, the performance of the specially designed APD is superior than that of the conventional structure in terms of avalanche breakdown voltage and maximum avalanche multiplication gain.…”

Section: Resultscontrasting

confidence: 55%

“…[8][9][10] The SAM structure can enhance gain and reduce multiplicative noise through impact ionization engineering. 11 Recently, Xie et al applied a low Al-content p-graded Al x Ga 1Àx N layer and a high/low Al-content AlGaN multiplication layer in back-illuminated SAM AlGaN APD, and obtained superior maximum gain of 6.11 Â 10 4 at 64.8 V. 12 In recent years, most efforts are exerted to enhance the electric field of multiplication layer to reduce the avalanche breakdown voltage and increase the gain of the AlGaN APDs, which is attributed to the polarization field induced in the multiplier layer. 13,14 In this work, we employed a gradually doped AlGaN layers as the charge region instead of the conventional AlGaN uniform doped charge layer based on a SAM-APD structure.…”

Section: Introductionmentioning

confidence: 99%

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AlGaN‐based solar‐blind avalanche photodetectors with gradually doped charge layer

Yao

Jiang

et al. 2022

Int J Numerical Modelling

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To improve the performances of AlGaN solar‐blind ultraviolet (UV) avalanche photodetectors (APDs), we propose a separate absorption and multiplication (SAM) AlGaN APD with a gradually doped charge layer. The calculation results indicate that the designed APD can significantly increase the maximum gain by almost 40%, and reduce the breakdown voltage by about 9% compared with the conventional AlGaN APD. The parameters of multiplication layer and p‐type layer are optimized, and the physical mechanism is described in detail, which provides theoretical guidance for high‐performance device structure design and experimental preparation.

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Section: Resultscontrasting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

AlGaN‐based solar‐blind avalanche photodetectors with gradually doped charge layer

Yao

Jiang

et al. 2022

Int J Numerical Modelling

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“…It is considered a highly valuable field for investment within the entire electromagnetic spectrum. With the development of technology and societal advancements, the demand for ultraviolet detection is becoming increasingly extensive in various fields such as industry and agriculture, medicine and health, scientific research, and military [1][2][3][4]. Traditional UV detectors mainly use photomultiplier tubes, which are capable of achieving high sensitivity in UV detection.…”

Section: Introductionmentioning

confidence: 99%

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

Xu,

Liu,

et al. 2024

International Academic Conference on Optics and Photonics (IACOP 2023)

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In this paper, we present the design and simulation of a GaN-based back-illuminated ultraviolet (UV) photodetector with an absorption layer compensation doping. In the conventional UV detector, the absorption layer typically exhibits a high background doping concentration (ranging from 1.0×10 15 to 1.0×10 17 cm -3 ), which unintentionally introduces carriers that impact the electric field distribution within the absorption layer. Consequently, the electric field near the N electrode is diminished. In the back-illumination operating mode, a substantial amount of the incident light is absorbed by the absorption layer positioned near the N electrode. This is primarily attributed to the high absorption coefficient of the AlGaN material. Consequently, the lower electric field in this region hinders the prompt conversion of the photogenerated carriers into signals. This design improves the performance of the UV photodetector by simulating the implementation of compensatory doping in the absorber layer. This helps to reduce the impact of background doping concentration. After optimization, at the peak detection wavelength of 360 nm, the compensated doped PD exhibited an unbiased peak responsivity of 0.15 A/W, as determined by spectral response simulation work.

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“…Ultraviolet (UV) detection technology has been widely used in military and civilian fields, such as missile warning and tracking, UV communication, skin disease diagnosis, food and drug expensive and cumbersome optical filters, which has injected new vitality into the research and application development of high-performance UV photodetectors [7][8][9]. Avalanche photodetector (APD) is suitable for the detection of weak UV signal due to the multiplication property [10][11][12][13]. The photogenerated carriers are accelerated under the effect of electric field to initiate impact ionization, thus forming new electron-hole pairs.…”

Section: Introductionmentioning

confidence: 99%

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

Cao,

Wang,

You

et al. 2023

J. Phys. D: Appl. Phys.

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Highly sensitive avalanche photodetector has become a promising candidate for detecting extremely weak target signals. However, the impact ionization multiplication simultaneously triggered by electrons and holes will lead to large excess noise, thus significantly influencing device avalanche performance. Herein, we propose a distinctive AlGaN-based ultraviolet avalanche photodiode with AlN/Al0.2Ga0.8N periodically stacked multiplication region. The higher effective masses and density of states in valence band renders holes limited in the quantum-well region, where thermalization plays a dominant role during carrier transport process. On the contrary, in the atomic-scale AlN/AlGaN stacked structure with a periodic thickness of 10 nm, the electron mutualization motion is conductive to electron obtaining sufficient energy to induce impact ionization. Hence, the mechanism of unipolar carrier induced avalanche multiplication effectively reduces device noise and improving multiplication gain. Meanwhile, the high electric field intensity and tilted energy band in the AlGaN/AlN periodically stacked region significantly contribute to the carrier impact ionization. Consequently, the device achieves a superior avalanche gain of more than 105 at 74 V reverse bias. It is envisioned that the unipolar carrier triggering avalanche events offers a viable route to build high-performance avalanche photodetectors.

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AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer

Cited by 3 publications

References 20 publications

AlGaN‐based solar‐blind avalanche photodetectors with gradually doped charge layer

AlGaN‐based solar‐blind avalanche photodetectors with gradually doped charge layer

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

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