2021
DOI: 10.1007/s00339-021-04608-4
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AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer

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Cited by 3 publications
(4 citation statements)
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“…The avalanche breakdown voltage of the conventional APD is 73.1 V, and the maximum avalanche multiplication gain is 6.7 × 10 4 . While the avalanche breakdown voltage of the designed APD with gradually doped charge layer reduces to 66.6 V, and the maximum avalanche multiplication gain is 9.26 × 10 4 which is higher than the gain of 6.11 × 10 4 reported by Xie et al 12 Obviously, the performance of the specially designed APD is superior than that of the conventional structure in terms of avalanche breakdown voltage and maximum avalanche multiplication gain.…”
Section: Resultscontrasting
confidence: 55%
See 1 more Smart Citation
“…The avalanche breakdown voltage of the conventional APD is 73.1 V, and the maximum avalanche multiplication gain is 6.7 × 10 4 . While the avalanche breakdown voltage of the designed APD with gradually doped charge layer reduces to 66.6 V, and the maximum avalanche multiplication gain is 9.26 × 10 4 which is higher than the gain of 6.11 × 10 4 reported by Xie et al 12 Obviously, the performance of the specially designed APD is superior than that of the conventional structure in terms of avalanche breakdown voltage and maximum avalanche multiplication gain.…”
Section: Resultscontrasting
confidence: 55%
“…[8][9][10] The SAM structure can enhance gain and reduce multiplicative noise through impact ionization engineering. 11 Recently, Xie et al applied a low Al-content p-graded Al x Ga 1Àx N layer and a high/low Al-content AlGaN multiplication layer in back-illuminated SAM AlGaN APD, and obtained superior maximum gain of 6.11 Â 10 4 at 64.8 V. 12 In recent years, most efforts are exerted to enhance the electric field of multiplication layer to reduce the avalanche breakdown voltage and increase the gain of the AlGaN APDs, which is attributed to the polarization field induced in the multiplier layer. 13,14 In this work, we employed a gradually doped AlGaN layers as the charge region instead of the conventional AlGaN uniform doped charge layer based on a SAM-APD structure.…”
Section: Introductionmentioning
confidence: 99%
“…It is considered a highly valuable field for investment within the entire electromagnetic spectrum. With the development of technology and societal advancements, the demand for ultraviolet detection is becoming increasingly extensive in various fields such as industry and agriculture, medicine and health, scientific research, and military [1][2][3][4]. Traditional UV detectors mainly use photomultiplier tubes, which are capable of achieving high sensitivity in UV detection.…”
Section: Introductionmentioning
confidence: 99%
“…Ultraviolet (UV) detection technology has been widely used in military and civilian fields, such as missile warning and tracking, UV communication, skin disease diagnosis, food and drug expensive and cumbersome optical filters, which has injected new vitality into the research and application development of high-performance UV photodetectors [7][8][9]. Avalanche photodetector (APD) is suitable for the detection of weak UV signal due to the multiplication property [10][11][12][13]. The photogenerated carriers are accelerated under the effect of electric field to initiate impact ionization, thus forming new electron-hole pairs.…”
Section: Introductionmentioning
confidence: 99%