AlGaN∕InGaN HEMTs for RF current collapse suppression

Lanford, W.; Kumar, V.; Schwindt, R.; Kuliev, A.; Adesida, I.; Dabiran, A. M.; Wowchak, A. M.; Chow, P. P.; Lee, J. W.

doi:10.1049/el:20040398

Cited by 33 publications

(20 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…InGaN channels have also been used to increase the electron confinement in nitride transistors (Lanford et al, 2004). Figure 104 shows the typical structure of one of these devices.…”

Section: Ingan Channelsmentioning

confidence: 99%

See 1 more Smart Citation

GaN-Based Transistors for High-Frequency Applications

Palacios

Mishra²,

Sujan³

2011

Comprehensive Semiconductor Science and Technology

View full text Add to dashboard Cite

“…InGaN channels have also been used to increase the electron confinement in nitride transistors (Lanford et al, 2004). Figure 104 shows the typical structure of one of these devices.…”

Section: Ingan Channelsmentioning

confidence: 99%

“…Device structure and band diagram of the AlGaN/InGaN/GaN high electron mobility transistor (HEMT) described inLanford et al (2004). Monte Carlo simulation of the electron velocity in different semiconductor materials.…”

mentioning

confidence: 99%

GaN-Based Transistors for High-Frequency Applications

Palacios

Mishra²,

Sujan³

2011

Comprehensive Semiconductor Science and Technology

View full text Add to dashboard Cite

“…Available reports on the development of InGaN channel HEMTs suggest that its realization with high In‐composition has always presented epitaxial challenges in terms of material and surface qualities and thus there are only limited reports on InGaN‐channel HEMTs even though for x < 0.10 . However, most of them explored InGaN for better carrier confinement with GaN buffer acting as a back‐barrier and only few from the recent reports have used it for the predicted velocity enhancement .…”

Section: Introductionmentioning

confidence: 99%

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Singh

Nath

2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this paper, a epitaxial design of InAlN/AlN/InGaN/GaN high electron mobility transistors (HEMTs), considering the vital aspects related to its device exploration is proposed. Mobility of two dimensional electron gas in the proposed, practically viable structures of InxGa1−xN‐channel (0.1 < x < 0.4) HEMT is estimated. It is shown that 2DEG mobility is predominantly limited by alloy scattering rather than phonon scattering, unlike in conventional GaN‐channel HEMTs. Finally, room temperature mobility of 2DEG in InGaN‐channel HEMT is simulated on the basis of alloy scattering and phonon scattering only. Results are in close proximity with reported experimental results. We observe that, for ns ≈ 2 × 1013 cm−2, mobility drops rapidly from ≈900 to ≈550 cm2 V−1 · s−1 as ‘x’ is increased from 0.1 to 0.2 and thereafter it decreases at a relatively lesser rate. Severe degradation in mobility is predicted for x > 0.3.

show abstract

“…It also has attracted much attention for new applications such as InGaN-channel high electron mobility transistors (HEMTs) [5,6], InGaN-based heterojunction bipolar transistors (HBTs) [7] and InGaN-based solar cells [8] in the most recent years. As we know, because of the misfit strains between Ga-N and In-N, and the low growth temperature of InN, many defects were generated such as misfit dislocations and V-shaped pits [9][10][11].…”

Section: Introductionmentioning

confidence: 99%