AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

Hu, Chih-Chun; Lin, Mon-Sen; Wu, Tser‐Son; Adriyanto, Feri; Sze, Po-Wen; Wu, Chang-Luen; Wang, Yeong-Her

doi:10.1109/ted.2011.2171690

Cited by 21 publications

(6 citation statements)

References 26 publications

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“…Although introducing a gate dielectric in an AlGaN/ GaN High Electron Mobility Transistor (HEMT) can effectively reduce the gate leakage and increase the I on /I off ratio, [1][2][3][4][5][6][7][8] some of the problems in conventional HEMTs may still be lingering in the resulting Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs). One example is the so called "current collapse" phenomenon, decreases in drain current (I d ) and transconductance (G m ) under pulsed or high frequency conditions, which can be efficiently suppressed for HEMT devices as long as their access regions are properly passivated.…”

Section: And T P Mamentioning

confidence: 99%

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Sun

Saadat

Chang-Liao

et al. 2013

Applied Physics Letters

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We introduce an ac-transconductance method to profile the gate oxide traps in a HfO 2 gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. The method extracts energy and spacial distributions of the oxide and interface traps under the gate from the frequency dependence of ac transconductance. We demonstrate the method using MOS-HEMTs with gate oxides that were annealed at different temperatures.

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Section: And T P Mamentioning

confidence: 99%

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Sun

Saadat

Chang-Liao

et al. 2013

Applied Physics Letters

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“…High-κ materials are widely employed as insulators growing on semiconductor to fabricate metal-oxide-semiconductor (MOS) gates for larger gate swing voltages and lower leakage currents [ 7 , 8 , 9 ]. Titanium dioxide (TiO 2 ) is one of the commonly applied high-κ insulators in the semiconductor industry.…”

Section: Introductionmentioning

confidence: 99%

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

et al. 2016

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This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies.

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“…A wide variety of materials have been employed as gate insulators and passivating material to improve the device reliability and performance. [4][5][6][7] On the other hand, the lack of high quality native oxide (Ga 2 O 3 ) as well as the traps associated in using these foreign/ex-situ grown insulators for GaN MIS-devices can adversely hamper the drain current density (I ds-max ) under pulsed conditions. It is difficult to modulate/mitigate the traps associated with AlGaN/GaN MIS interface; [8][9][10] that leads to current collapse.…”

Section: Introductionmentioning

confidence: 99%

Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

2012

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The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD) grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN) and AlGaN layers (DT-AlGaN) respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET) -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max). Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

Cited by 21 publications

References 26 publications

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

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