AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Yan, Dong; Son, Dae‐Ho; Dai, Quan; Lee, Jun-Hyeok; Won, Chul-Ho; Kim, Jeong-Gil; Kang, Seung-Hyeon; Lee, Jung‐Hee; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Yi

doi:10.1016/j.snb.2017.12.188

Cited by 46 publications

(13 citation statements)

References 29 publications

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“…The pH level is another critical parameter for water corrosivity. It measures water's acidity or alkalinity by determining hydrogen ions (H+) [23]. Water with a pH value of less than 7.0 is acid, whereas a pH level above 7.0 is considered a base.…”

Section: Phmentioning

confidence: 99%

Recent Advancement of the Sensors for Monitoring the Water Quality Parameters in Smart Fisheries Farming

et al. 2021

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Water quality is the most critical factor affecting fish health and performance in aquaculture production systems. Fish life is mostly dependent on the water fishes live in for all their needs. Therefore, it is essential to have a clear understanding of the water quality requirements of the fish. This research discusses the critical water parameters (temperature, pH, nitrate, phosphate, calcium, magnesium, and dissolved oxygen (DO)) for fisheries and reviews the existing sensors to detect those parameters. Moreover, this paper proposes a prospective solution for smart fisheries that will help to monitor water quality factors, make decisions based on the collected data, and adapt more quickly to changing conditions.

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Section: Phmentioning

confidence: 99%

Recent Advancement of the Sensors for Monitoring the Water Quality Parameters in Smart Fisheries Farming

et al. 2021

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“…2DEG density in the channel is balanced to the surface states of the GaN surface (the cap layer in our case). Therefore, the adsorption of positive or negative charges on the Ga x O y /GaN surface can change the surface charge state as well as the surface potential, thus altering the 2DEG density [ 36 ]. The relevant reactions mechanisms are as follows.…”

Section: Basic Structure and Operation Principlementioning

confidence: 99%

“…In 2015, Lee et al [ 27 ] used a photoelectrochemical (PEC) etching method to grow a ZnO-based nanorod array on the recessed gate of the AIGaN/GaN HEMT sensor to improve device performance. Dong et al [ 36 ] developed an idea to improve the sensitivity of pH sensors based on AlGaN/GaN HEMT by introducing multi-sensing segments in 2018. Li et al [ 37 ] fabricated a normally off AlGaN/GaN HEMT through the photoelectrochemical (PEC) method for a pH sensor application in 2019.…”

Section: Introductionmentioning

confidence: 99%

Low-Power pH Sensor Based on Narrow Channel Open-Gated Al0.25Ga0.75N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels

Yang

et al. 2020

Materials

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pH sensors with low-power and strong anti-interference are extremely important for industrial online real-time detection. Herein, a narrow channel pH sensor based on Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) with package integrated Polydimethylsiloxane (PDMS) microchannels is proposed. The fabricated device has shown potential advantages in improving stability and reducing power consumption in response to pH changes of the solution. The performance of the pH sensor was demonstrated where the preliminary results showed an ultra-low power (<5.0 μW) at VDS = 1.0 V. Meanwhile, the sensitivity was 0.06 μA/V·pH in the range of pH = 2 to pH = 10, and the resolution of the sensor was 0.1 pH. The improvement in performance of the proposed sensor can be related to the narrow channel and microchannel, which can be attributed to better surface GaxOy in a microchannel with larger H+ and HO− concentration on the sensing surface during the detection process. The low-power sensor with excellent stability can be widely used in various unattended or harsh environments, and it is more conducive to integration and intelligence, which lays the foundation for online monitoring in vivo.

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“…This material has become an important material in the industry due to the above-mentioned properties. It can be listed as; solar-cell [6][7], pH sensor [8], LED device [9], beta voltaic device [10].…”

Section: Introductionmentioning

confidence: 99%

n-Si / GaN ince filmlerin karakterizasyonu: azot akış hızının etkisi

Mantarcı

2020

Türk Doğa Ve Fen Dergisi

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The GaN thin film was fabricated on n-type Si by a Radio Frequency magnetron sputtering method with applied various nitrogen (N) rates. The XRD confirmed the produced film had in a polycrystalline structure (orientations (110) and (100)). It was seen that different N rates varied structural parameters of fabricated material. The optical analysis showed that various N rates changed thin film optical-band gap energy by reason of reduced N vacancy. The AFM pictures demonstrated almost homogeneous with periodic grain arrangements, Nano-structured surface of GaN thin film. From SEM pictures, we detected agglomerations on the surface of the GaN thin film. Possible causes of them were deeply discussed. Raman results proved the corresponding characteristic E 2 (high) peak of the hexagonal GaN and exhibited that all thin films had tensile stress. Reasons of this stress were discussed. Optical, morphological, structural parameters of thin film can be improved with controlling N rates. Produced thin films can be basic material in device applications such as solar cells, Light Emitting Diode (LED). n-Si / GaN ince filmlerin fiziksel özellikleri: farklı N oranı etkisi Keywords RF saçtırma tekniği, GaN, N oranı, III-nitrür Öz: GaN ince filmi, Radyo Frekansı magnetron saçtırma yöntemi ile n-tipi Si üzerinde farklı N oranları uygulanarak üretildi. XRD analizleri üretilen filmin polikristal yapıda olduğunu (oryantasyon (110) ve (100)) teyit etmiştir. Farklı N oranlarında malzemenin yapısal parametrelerinin değiştiği görülmektedir. Optik analiz, çeşitli N oranlarının Azot boşluğunun azalması nedeniyle ince film optik bant boşluk enerjisini değiştirdiğini göstermektedir. AFM resimleri, GaN ince filminin Nano yapılı bir yüzeye sahip olduğunu ve periyodik tanecik yapısı gösterdiğini neredeyse homojen olan yapıyı göstermiştir. SEM resimlerinden GaN ince filminin yüzeyinde topaklar tespit ettik. Bunların olası nedenleri detaylı tartışıldı. Raman sonuçları, altıgen GaN'nin karşılık gelen karakteristik E 2 (yüksek) optic fonon titreşimini kanıtlamıştır ve tüm ince filmlerin sıkıştırma gerginliğine sahip olduğunu göstermiştir. Filmde oluşan bu stresin nedenleri tartışıldı. GaN ince filmin optik, morfolojik, yapısal parametreleri N oranlarının kontrol edilmesiyle iyileştirilebildiği bulunmuştur. Üretilen ince filmler, güneş pilleri, Işık Yayan Diyot (LED) gibi cihaz uygulamalarında temel malzeme olabilmektedir.

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AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Cited by 46 publications

References 29 publications

Recent Advancement of the Sensors for Monitoring the Water Quality Parameters in Smart Fisheries Farming

Recent Advancement of the Sensors for Monitoring the Water Quality Parameters in Smart Fisheries Farming

Low-Power pH Sensor Based on Narrow Channel Open-Gated Al0.25Ga0.75N/GaN HEMT and Package Integrated Polydimethylsiloxane Microchannels

n-Si / GaN ince filmlerin karakterizasyonu: azot akış hızının etkisi

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