AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for RF Applications

Tsou, Chuan‐Wei; Kang, Hsueh-Chun; Lian, Yi-Wei; Hsu, Shawn S. H.

doi:10.1109/ted.2016.2605128

Cited by 21 publications

(17 citation statements)

References 27 publications

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“…In low frequency conditions, R L is much smaller than R ds and R sub. 22 Therefore, the formula () is simplified to the formula (), and the simplified formula can be used to extract L ds . And the formula () is used to extract R L. 19,20

Imag (Y_{21} goodbreak+ Y_{12}) goodbreak= \frac{ω (R_{ds}^{2} C_{ds} goodbreak- L_{ds}) - ω^{3} C_{ds}^{2} L_{ds} R_{ds}^{2}}{{(R_{normalds} + R_{normalL} - ω^{2} L_{normalds} R_{normalds} C_{normalds})}^{2} + ω^{2} (L_{ds} goodbreak+ R_{L} R_{ds} C_{ds})}

Imag ((), Y_{21} goodbreak+ Y_{12}) goodbreak= ω ((), C_{ds} goodbreak- \frac{L_{ds}}{R_{italicds}^{2}})

Real ((), Y_{22} goodbreak+ Y_{12}) goodbreak= \frac{1 + {(ω R_{ds} C_{ds})}^{2}}{R_{ds} + ((), 1 goodbreak+ {(ω R_{ds} C_{ds})}^{2}) R_{L}}

…”

Section: Extraction Of Intrinsic Parametersmentioning

confidence: 99%

“…R ds can be obtained from the formula (21). Substituting R ds into the formula (22), C ds can be obtained. Similarly, R sub can be computed by replacing R ds into the formula (23).…”

Section: Extraction Of Intrinsic Parametersmentioning

confidence: 99%

“…In low frequency conditions, R L is much smaller than R ds and R sub. 22 Therefore, the formula ( 25) is simplified to the formula (26), and the simplified formula can be used to extract L ds . And the formula ( 27) is used to extract R L.…”

Section: Extraction Of Intrinsic Parametersmentioning

confidence: 99%

“…It was revealed that substrate effects also have an impact on the modeling of GaN HEMT small‐signal devices 21 . In order to accurately model the impact of this substrate effect, R sub and C sub are added to the intrinsic part of the proposed model in this paper 22,23 . Regarding the modeling of GaN HEMT devices, artificial neural network (ANN) is a very effective modeling method 24–26 .…”

Section: Introductionmentioning

confidence: 99%

“…21 In order to accurately model the impact of this substrate effect, R sub and C sub are added to the intrinsic part of the proposed model in this paper. 22,23 Regarding the modeling of GaN HEMT devices, artificial neural network (ANN) is a very effective modeling method. [24][25][26] Due to the complexity of this method, 26 the direct modeling method for modeling GaN HEMT has been adopted in this paper.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Zhai

Cai

Zhang

et al. 2022

Int J RF Mic Comp-Aid Eng

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An improved GaN high electron mobility transistor (HEMT) small-signal equivalent model is proposed. To model the effects of extrinsic parameters that vary with the bias voltage, R L and L ds are added to the model. Moreover, substrate-related parameters (R sub and C sub ) are used to model the substrate effect. In order to avoid damaging the gate under high forward gate pressure conditions, an accurate parasitic parameter extraction method is proposed, which improves the reliability and validity of the parameter extraction. The S-parameters of the proposed model are in good agreement with the measured S-parameters in the range of 0.5-20.5 GHz.

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Imag (Y_{21} goodbreak+ Y_{12}) goodbreak= \frac{ω (R_{ds}^{2} C_{ds} goodbreak- L_{ds}) - ω^{3} C_{ds}^{2} L_{ds} R_{ds}^{2}}{{(R_{normalds} + R_{normalL} - ω^{2} L_{normalds} R_{normalds} C_{normalds})}^{2} + ω^{2} (L_{ds} goodbreak+ R_{L} R_{ds} C_{ds})}

Imag ((), Y_{21} goodbreak+ Y_{12}) goodbreak= ω ((), C_{ds} goodbreak- \frac{L_{ds}}{R_{italicds}^{2}})

Real ((), Y_{22} goodbreak+ Y_{12}) goodbreak= \frac{1 + {(ω R_{ds} C_{ds})}^{2}}{R_{ds} + ((), 1 goodbreak+ {(ω R_{ds} C_{ds})}^{2}) R_{L}}

…”

Section: Extraction Of Intrinsic Parametersmentioning

confidence: 99%

“…R ds can be obtained from the formula (21). Substituting R ds into the formula (22), C ds can be obtained. Similarly, R sub can be computed by replacing R ds into the formula (23).…”

Section: Extraction Of Intrinsic Parametersmentioning

confidence: 99%

Section: Extraction Of Intrinsic Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Zhai

Cai

Zhang

et al. 2022

Int J RF Mic Comp-Aid Eng

View full text Add to dashboard Cite

show abstract

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Rao

Singh²,

Lenka

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (f T , f max ) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These f T , f max and JFOM demonstrate that the proposed HEMT on β-Ga 2 O 3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

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A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors

Jeong

Lee

Yeom

et al. 2023

Physica Status Solidi (a)

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Degradation of ohmic contacts on β-Ga 2 O 3 under thermal stress conditions is a severe issue that hinders its high-temperature applicability. Herein, a hybrid Schottky-ohmic drain contact (HSD) is demonstrated in β-Ga 2 O 3 field-effect transistors (FETs). It is compared with a conventional ohmic drain contact (OD) after extended thermal annealing. Pulsed drain bias measurement is conducted to investigate the trapping process at the interface of both drain contacts with the β-Ga 2 O 3 channel. Even with the extended Schottky metal region, the β-Ga 2 O 3 FET with the HSD contact exhibits similar contact and on-resistance. Additionally, it shows field-effect mobility higher than that of the OD contact device. Enhanced off-state breakdown characteristics are achieved.

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AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for RF Applications

Cited by 21 publications

References 27 publications

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors

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AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for RF Applications

Cited by 21 publications

References 27 publications

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors

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Product

Resources

About

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications