AlGaN/GaN HEMTs-an overview of device operation and applications

Mishra, Umesh K.; Parikh, P.; Wu, Yifeng

doi:10.1109/jproc.2002.1021567

Cited by 1,836 publications

(774 citation statements)

References 13 publications

(4 reference statements)

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“…[7][8][9] All of these distinct characteristics are useful for power devices. [10][11][12][13] It has been known that the electron density of the AlGaN/GaN heterostructure increases with the thickness of Al x Ga 1−x N and Al mole fraction x. 14 In an endeavor to integrate the merits of these two material systems, there have recently been substantial studies on current transport from graphene to Al x Ga 1−x N/GaN heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

et al. 2016

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The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

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Section: Introductionmentioning

confidence: 99%

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

et al. 2016

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“…1,2 Some unique physical properties such as wide band gap tuneable between 3.4 to 6.2 eV, spontaneous polarization, high electron saturation velocities, low lattice mismatch, large band offset etc. render AlGaN/GaN based heterostructures particularly ideal for realizing high electron mobility transistors (HEMT) for high-frequency and high-power applications.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Mishra¹,

Sharma²,

Manchanda³

et al. 2014

AIP Advances

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Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.

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“…In particular, heterostructures based on Al x Ga 1−x N/GaN represent the building-blocks for a number of current (opto)electronic devices, including blue and white LEDs [3,4], laser diodes and lasers [5], high-power- [6,7] and highelectron-mobility-transistors (HEMTs) [8,9]. Beside the tunability of the bandgap from the 3.4 eV of GaN to the 6.2 eV in AlN at room temperature, there is between GaN and AlN a 2.5% lattice mismatch, allowing the pseudomorphic growth of Al x Ga 1−x N layers with a biaxial tensile strain on GaN.…”

Section: Introductionmentioning

confidence: 99%

Controlling a three dimensional electron slab of graded AlxGa1−xN

Adhikari

Capuzzo

et al. 2016

Applied Physics Letters

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Polarization induced degenerate n-type doping with electron concentrations up to ∼10 20 cm −3 is achieved in graded Al x Ga 1−x N layers (x: 0%→37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy and electron energy loss spectroscopy confirm the gradient in the composition of the Al x Ga 1−x N layers, while magnetotransport studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir. * rajdeep.adhikari@jku.at † alberta.

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AlGaN/GaN HEMTs-an overview of device operation and applications

Cited by 1,836 publications

References 13 publications

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Controlling a three dimensional electron slab of graded AlxGa1−xN

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