AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Abstract

In this work, we demonstrate, for the first time, Al0.35GaN/GaN/Al0.25GaN double heterostructure field effect transistors on 200 mm Si(111) substrates. Thick crack-free Al0.25GaN buffer layers are achieved by optimizing Al0.75GaN/Al0.5GaN intermediate layers and AlN nucleation layers. The highest buffer breakdown voltage reaches 1380 V on a sample with a total buffer thickness of 4.6 µm. According to Van der Pauw Hall measurements, the electron mobility is 1766 cm2 V-1 s-1 and the electron density is 1.16×1013 cm-2, which results in a very low sheet resistance of 306±8 Ω/square.

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

“…Besides, the adoption of AlGaN buffer is another favored method to improve the electrical breakdown performance due to its higher critical electric field than GaN (AlN ∼11.7 MV/cm, GaN∼3.5 MV/cm). 9 Here, we further investigate the impact of carbon incorporation into AlGaN buffer on the off-state breakdown voltage (V BD ), which has rarely been reported for HEMT.…”

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

“…Recently, lots of efforts have been done to develop low cost high performance large area GaN-on-Si technology [1][2][3] for power switching or RF applications. In order to develop a high performance device with a low gate leakage current, a high gate overdrive, and a high breakdown voltage, AlGaN/GaN Metal Insulated Semiconductors High Electron Mobility Transistors (MIS-HEMTs) have been demonstrated [4,5].…”

Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue ® MOCVD platform

“…Recently, GaN based material grown on silicon has become more and more attractive for its potential applications in light emitting diodes (LEDs) and power devices [1,2]. The success of GaN epitaxy on large size Si substrate promises a remarkable cost reduction and a possibility of leveraging complementary Metal-Oxide-Semiconductor (CMOS) based technology for mass production.…”