AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content

Horta, Isabela Machado; Damasceno, Barbara Souza; Oliveira, Ricardo Santos; Pereira, Aledir Silveira; Massi, M.; Sobrinho, Argemiro Soares da Silva; Leite, Douglas Marcel Gonçalves

doi:10.1016/j.surfin.2023.103023

Cited by 3 publications

(3 citation statements)

References 27 publications

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“…The powder XRD pattern of the fabricated CuTPP thin film in the 2θ range of 5–60° is illustrated in Figure . The CuTPP thin film depicts a partially crystalline structure embedded in an amorphous background . Molecules show preferred orientation along the (020) and (121) planes at 2θ = 6.83 and 10.32° .…”

Section: Experimental Results and Discussionmentioning

confidence: 99%

“…The CuTPP thin film depicts a partially crystalline structure embedded in an amorphous background. 29 Molecules show preferred orientation along the (020) and (121) planes at 2θ = 6.83 and 10.32°. 30 These two minor XRD peaks highlight the polycrystalline nature of the material due to the formation of nanocrystalline structures.…”

Section: Powder X-ray Diffraction Analysis (Pxrd)mentioning

confidence: 99%

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Comprehensive Analysis on the Z-Scan Response of Thermally Evaporated CuTPP Thin Films in Terms of H Aggregation and Charge Transfer Dynamics

Clavian,

Rajesh Kumar,

Anil Kumar

et al. 2024

J. Phys. Chem. C

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Nonlinear absorption (NLA) and nonlinear refraction (NLR) properties of the Cu(II) 5, 10, 15, 20-tetraphenyl-21H, 23H-porphine (CuTPP) thin film at 532 nm are investigated by using Z-scan technique with a laser of pulse width, τ = 6 ns and 30 ps. Powder XRD study of the CuTPP thin film reveals the nanocrystalline structure of the material embedded in an amorphous background. AFM and FESEM images depict a uniform, densely packed thin film with an RMS value of 14.69 nm. A characteristic broad blue-shifted Soret absorption band with davydov splitting in the UV−visible spectrum and stacking of particles illustrated in the AFM image highlights the formation of H-aggregates. Emission peaks at 651 and 711 nm are attributed to de-excitation from 2 T 1 and 4 T 1 tripmultiplet states to the ground state. In the 30 ps pulse regime, the NLA dynamics is influenced by saturation of tripmultiplet states and the band filling effect, resulting in the nonlinear saturation absorption phenomenon. However, NLA at 6 ns pulse duration is influenced by the excited-state absorption of triplet states, resulting in the reverse saturable absorption phenomenon. Closed-aperture Z-scan depicts self-focusing nonlinearity (Δn > 0) in the picosecond regime. In the nanosecond regime, the CuTPP thin film depicts a positive NLR at a lower intensity, and at a higher intensity, it shows a self-defocusing (Δn < 0) NLR nature. The presence of the Cu 2+ ion in the porphyrin structure results in inception of the charge transfer (CT) state and leads to distinctive ultrafast relaxation dynamics from the 2 S 2 state, thereby resulting in exclusive nonlinear optical (NLO) properties. Van der Waals interaction through π-stacking along with high electron exchange between Cu and porphyrin results in enhanced NLO coefficient values. This highlights the prominence of the CuTPP thin-film derivative for new-generation optical devices.

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Section: Experimental Results and Discussionmentioning

confidence: 99%

Section: Powder X-ray Diffraction Analysis (Pxrd)mentioning

confidence: 99%

Comprehensive Analysis on the Z-Scan Response of Thermally Evaporated CuTPP Thin Films in Terms of H Aggregation and Charge Transfer Dynamics

Clavian,

Rajesh Kumar,

Anil Kumar

et al. 2024

J. Phys. Chem. C

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“…Therefore, the integration of A III N semiconductor materials with silicon chips intended for signal processing opens a wide field for the appearance of new functional devices [7,8]. In particular, the formation of electromagnetic radiation sources on the basis of nitride compounds formed on silicon substrates would probably enhance the facilities of silicon photonics and start optical data transmission just inside the microelectronic chips [9].…”

Section: Introductionmentioning

confidence: 99%

Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface

Seredin,

Kurilo,

Goloshchapov

et al. 2023

Photonics

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The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon carbide layer grown with matched substitution of the atoms on the surface of porous silicon SiC/porSi/cSi. A complex analysis performed using a set of structural and spectroscopic techniques demonstrated that the epitaxial growth of the nuclear AlN layer on all types of the substrates in a N-enriched environment resulted in the formation of AlxGa1-xN/AlN heterostructures with a Ga-polar surface, which was realized only on the SiC/porSi/cSi substrate. The layer of AlxGa1-xN on cSi and porSi/cSi substrates was in the state of disordered alloy with an excess of gallium atom content. It was shown that a great difference in the lattice parameters of a substrate–film pair resulted not only in the appearance of a number of various defects but also in a considerable effect on the chemical process of the formation of the alloys, in our case, the AlxGa1-xN alloy. It was shown that nanoscale columns of AlxGa1-xN formed on SiC/porSi/cSi substrate were inclined relative to the c-axis, which was connected with the features of the formation of a SiC layer by the matched substitution of the atoms on the porous Si substrate, resulting in the formation of the inclined (111) SiC facets at the boundary of the (111) Si surface and pores in Si. Optical studies of the grown samples demonstrated that the optical band-to-band transition for the AlxGa1-xN alloy with Eg = 3.99 eVB was observed only for the heterostructure grown on the SiC/porSi/cSi substrate. A qualitative model is proposed to explain the difference in the formation of AlxGa1-xN layers on the substrates of cSi, porSi/cSi and SiC/porSi/cSi. The results obtained in our work demonstrate the availability of using SiC/porSi/cSi substrates for the integration of silicon technology and that used for the synthesis of nanoscale columnar AlxGa1-xN heterostructures using plasma-activated molecular-beam epitaxy with a nitrogen source.

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Enhancing sputtered GaN/Si film quality by adding AlGaN buffer layer in a continuous deposition process

Horta,

Pereira,

Neto

et al. 2024

Surfaces and Interfaces

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AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content

Cited by 3 publications

References 27 publications

Comprehensive Analysis on the Z-Scan Response of Thermally Evaporated CuTPP Thin Films in Terms of H Aggregation and Charge Transfer Dynamics

Comprehensive Analysis on the Z-Scan Response of Thermally Evaporated CuTPP Thin Films in Terms of H Aggregation and Charge Transfer Dynamics

Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface

Enhancing sputtered GaN/Si film quality by adding AlGaN buffer layer in a continuous deposition process

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