AlGaN devices and growth of device structures

Jones, Kenneth A.; Chow, T. Paul; Wraback, Michael; Shatalov, M.; Sitar, Zlatko; Shahedipour, F.; Udwary, K.; Tompa, Gary S.

doi:10.1007/s10853-015-8878-3

Cited by 61 publications

(23 citation statements)

References 156 publications

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“…[1][2][3] GaN growth on a Si substrate is one of the most useful methods for providing large-area GaN wafers at a low cost. [4][5][6][7][8] As aresult of several breakthroughs, 9,10 an AlGaN/GaN HEMT on Si demonstrated a breakdown voltage of over 1400 V. 10 Unfortunately, the large lattice and thermal expansion mismatches between Si and GaN produce high-density dislocations in a GaN layer.…”

Section: Introductionmentioning

confidence: 99%

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

et al. 2016

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The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

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Section: Introductionmentioning

confidence: 99%

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

et al. 2016

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“…Additionally, a long annealing ([ 1 h) at high temperature (1140°C) did not significantly reduce the resistivity of the layers. Besides, it was demonstrated in Si-implanted AlGaN heterostructures that after implantation and annealing the resistivity increased [42,43]. In the other work, after protons implantation in AlGaN heterostructures the sheet resistivity was also very high (10 12 X/sq) but declined after annealing at 700°C (to 10 9 X/sq) [17].…”

Section: Electrical Characterizationmentioning

confidence: 99%

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

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Rozbiegała

et al. 2020

J Mater Sci: Mater Electron

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Phosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

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“…[9] proposed the concept of piezotronics and indicated that the core of the multiple coupling property in PSCs is the voltage potential derived from mechanical strain. Piezotronics has inspired development of new microelectric devices [10–12], so piezoelectricity in PSCs has attracted increasing attention.…”

Section: Introductionmentioning

confidence: 99%

A shooting method for nonlinear boundary value problems in a thermal piezoelectric semiconductor plate

et al. 2020

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Based on the pyroelectricity, piezoelectricity, and thermoelasticity in nonlinear constitutive equations, we report a thermal piezoelectric semiconductor model under a mechanical load, a Schottky contact boundary condition, and a temperature gradient. To solve this nonlinear boundary value problem, we propose a shooting method. In comparison with the results obtained by COMSOL, the shooting method is reliable. Furthermore, the influence of the temperature gradient on the extended displacements and stress fields is discussed. The numerical results show that a small change in the temperature has the remarkable effect on a mechanical electric field in thermal piezoelectric semiconductors.

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AlGaN devices and growth of device structures

Cited by 61 publications

References 156 publications

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

A shooting method for nonlinear boundary value problems in a thermal piezoelectric semiconductor plate

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