AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Nanjo, Takuma; Takeuchi, Misaichi; Imai, A.; Suita, Muneyoshi; Oishi, Toshiyuki; Abe, Yuji; Yagyu, Eiji; Kurata, Tetsuyuki; Tokuda, Yasunori; Aoyagi, Yoshinobu

doi:10.1049/el.2009.2711

Cited by 21 publications

(16 citation statements)

References 14 publications

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“…1–7are experimental data of AlGaN/AlGaN heterostructures from Refs. , and squares labeled as Nos. 8–9 are data of InAlN/AlGaN heterostructures from Refs.…”

Section: Resultsmentioning

confidence: 99%

Electronic Transport Properties in AlInGaN/AlGaN Heterostructures

Yao

Zhang

Xue

et al. 2018

Physica Status Solidi (a)

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The AlGaN‐channel III‐N heterostructure effect transistor (HFET) devices with high breakdown voltage and acceptable on‐resistance has shown great potential for next generation of power switching. The electronic transport property of two‐dimensional electron gases (2DEGs) in AlInGaN/AlGaN heterostructures is investigated for the first time, and the effects of the alloy disorder scattering from both the barrier layer and the channel layer are analyzed. The quaternary alloy composition dependences of the 2DEG density and mobility and the sheet resistance (positively proportional to the device on‐resistance) are studied in nearly lattice matched AlInGaN/Al0.2Ga0.8N heterostructures. The alloy composition ranges of the AlxInyGa1−x−yN barrier layer of 0.58 ≤ x ≤ 0.76 and 0 ≤ y ≤ 0.14 is found to be optimal in all aspects, which corresponds to the threshold voltage of −1.55 ∼ −6.24 V for an AlInGaN/Al0.2Ga0.8N HFET with a nickel gate. Moreover, the temperature dependence of 2DEG mobility in lattice‐matched AlInGaN/AlGaN heterostructures is discussed with various scattering models. The results show that the magnitudes of the mobility in the sample Al0.3In0.05Ga0.65N/Al0.05Ga0.95N, Al0.5In0.06Ga0.44N/Al0.2Ga0.8N, and Al0.8In0.06Ga0.14N/Al0.5Ga0.5N heterostructures reduces by 61%, 47%, and 37% with the temperature increasing from 300 to 600 K. Our research may provide some instructions for the application of AlInGaN/AlGaN heterojunction to high voltage power devices.

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“…1–7are experimental data of AlGaN/AlGaN heterostructures from Refs. , and squares labeled as Nos. 8–9 are data of InAlN/AlGaN heterostructures from Refs.…”

Section: Resultsmentioning

confidence: 99%

Electronic Transport Properties in AlInGaN/AlGaN Heterostructures

Yao

Zhang

Xue

et al. 2018

Physica Status Solidi (a)

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“…Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (V b ) and improving the device reliability at high temperatures. Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13][14][15]. Nanjo Zhang et al fabricated the AlGaN channel HEMTs with a novel ohmic/Schottky-hybrid drain contact, and a record high breakdown voltage of more than 2200 V was obtained for the AlGaN channel HEMTs [11].…”

Section: Introductionmentioning

confidence: 99%

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Zhang

Wang

et al. 2020

Nanoscale Res Lett

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In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (I max) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0 V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics but also develop a new thinking for the studies of group III nitride-based electronic devices.

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“…Similar drain leakage current had occurred in the AlGaN channel HEMTs using GaN buffer layer on Sapphire substrate and detailed investigation had revealed an existence of residual carriers in the deep region of the channel layer that formed a leakage current pass from source to drain at off-state. 17 We consider, in this study, similar residual carriers existed in the deep region of the channel layer due to the substitution of substrate from Sapphire to SiC, and these residual carriers would also trap electrons in the pulsed mode operation caused current collapse. Although breakdown voltages were decreased, the obtained values were 380 and 1080 V in the HEMTs with the L gd of 3 and 10 μm, respectively, and these were sufficiently higher than that in GaN channel HEMTs.…”

Section: Results and Discussion Eptaxial Layer Characteristicsmentioning

confidence: 98%

AlGaN Channel HEMT with Extremely High Breakdown Voltage

et al. 2011

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A channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

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AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Cited by 21 publications

References 14 publications

Electronic Transport Properties in AlInGaN/AlGaN Heterostructures

Electronic Transport Properties in AlInGaN/AlGaN Heterostructures

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

AlGaN Channel HEMT with Extremely High Breakdown Voltage

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