AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut

Feng, Feng; Zhang, Ke; Liu, Yibo; Lin, Yonghong; Xu, Ke; Kwok, Hoi Sing; Liu, Zhaojun

doi:10.1109/led.2021.3130750

Cited by 26 publications

(22 citation statements)

References 27 publications

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“…As the μLEDs scaling, the smaller-sized devices provided higher brightness under the same injection current density thanks to the improved current spreading uniformity and heat dissipation. [153] As we all know that one of another main concerns for LEDs is their junction temperature and thermal stability. As depicted in studies, [105,154,155] the thermal effect is a key issue which affects the performance of the LED devices.…”

Section: Wwwadvmattechnoldementioning

confidence: 99%

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Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

Liang

Sun

2022

Adv Materials Technologies

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AlGaN‐based deep ultraviolet light‐emitting diodes (UV LEDs) have gained rapidly growing attention due to their wide applications in water purification, air disinfection, and sensing as well as optical communication. Moreover, deep UV radiation has been verified as one of effective way to inactivate COVID‐19. However, although numerous efforts have been made in deep UV LED chips, the reported highest external quantum efficiency (EQE) of them is 20.3%, which is far lower than that of visible LEDs. The EQE of commercial packaged AlGaN‐based deep UV LEDs is usually lower than 5%, which will cause serious reliability problems as well. Therefore, it is very urgent to improve EQE and reliability of the devices from packaging level. In this review, a systematical summarization about the packaging technologies of AlGaN‐based deep UV LEDs has been analyzed and future prospects have been made as well. Firstly, this work provides a brief overview of the devices and analyzes why the packaging level reduces EQE and reliability in theory. Then, systematically reviews the recent advances in packaging technologies and deep UV micro‐LEDs. Finally, conclusions and outlooks are given as well. This review is of great significance for promoting the development of the packaging technologies for AlGaN‐based deep UV LEDs.

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Section: Wwwadvmattechnoldementioning

confidence: 99%

“…As the μLEDs scaling, the smaller‐sized devices provided higher brightness under the same injection current density thanks to the improved current spreading uniformity and heat dissipation. [ 153 ]…”

Section: Recent Advances In Packaging Technologiesmentioning

confidence: 99%

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

Liang

Sun

2022

Adv Materials Technologies

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“…11,12 While the research on AlGaN-based deep-ultraviolet (deep-UV) micro-LEDs is still challenging, 13,14 few efforts were invested in its application as an excitation source to R/G/B QDs. 15 In this work, we focused on the AlGaN-based deep-UV micro-LED as a high-efficiency excitation source for QD display. Two types of deep-UV micro-LEDs with different metal-semiconductor contact designs were fabricated and compared in device size from 200 Â 200 to 10 Â 10 μm 2 .…”

Section: Introductionmentioning

confidence: 99%

“…As the R/G/B QDs show higher absorption efficiency to lower wavelength photons, blue‐violet and near‐UV micro‐LEDs were proposed to improve the color rendering and increase the excitation efficiency 11,12 . While the research on AlGaN‐based deep‐ultraviolet (deep‐UV) micro‐LEDs is still challenging, 13,14 few efforts were invested in its application as an excitation source to R/G/B QDs 15 …”

Section: Introductionmentioning

confidence: 99%

AlGaN multiple quantum well deep‐ultraviolet micro‐light‐emitting diodes for high color conversion efficiency quantum dots display

et al. 2022

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Displays based on inorganic micro-light-emitting diodes (micro-LEDs) are highly anticipated for next-generation technologies. AlGaN-based deepultraviolet (deep-UV) micro-LED as the excitation source for quantum dots display with high efficiency was reported in this paper. To achieve optimized electro-optical performance, deep-UV micro-LEDs with different electrodes were fabricated and analyzed in sizes from 200 Â 200 to 10 Â 10 μm 2 . At the same forward bias, the devices with Ti/Al-based electrodes achieved 10 times injection current and three times electroluminescence intensity than those with Cr/Al-based electrodes. The blueshift phenomenon of deep-UV light was observed from 292 nm at 2 A/cm 2 to 287 nm at 200 A/cm 2 with the increasing current density. By the excitation of deep-UV micro-LED, quantum dot film achieved high light conversion efficiency and optimized color rendering, as the converted color emission peak was separate from the pumping source. The high energy of deep-UV photons and the narrow emission bandwidth of QDs resulted in prominent color purity. The forward voltage and electroluminescence intensity uniformity of a 250 Â 250 micro-LED array with each pixel size of 30 Â 30 μm 2 were further discussed. The optical microscope images of green QD film pumped by a deep-UV micro-LED demonstrated its competitive application in the color-converted display.

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“…AlGaN-based UV-C Micro-LED array with invisible radiation in wavelengths ranging from 200 nm to 280 nm is invested with great research efforts recently due to its great promotion in the display (1), optogenetic neuroscience (2-4), optical communications systems (5,6), and maskless lithography industry (7,8). AlN buffer layers grown on sapphire or AlN substrates are widely applied in research on UV-C LEDs, laser diodes, and photodiodes (9).…”

Section: Introductionmentioning

confidence: 99%

P‐76: Elimination of Nanorods by Tetramethylammonium Hydroxide for the Fabrication of AlGaN‐based UV‐C Micro‐LED Array

Feng

Liu

Zhang

et al. 2022

Symp Digest of Tech Papers

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Short‐wavelength ultraviolet (UV‐C) micro light‐emitting diode (Micro‐LED) array greatly benefits the optogenetic applications in neuroscience, optical communications, and maskless lithography. In this work, UV‐C Micro‐LED arrays with each pixel size of 10×10 μm2 were fabricated, and the nanorods introduced by inductively coupled plasma (ICP) etching were eliminated by post‐ICP tetramethylammonium hydroxide (TMAH) treatment. The pixel‐level electrical characteristics were analyzed, and the peak wavelength stability under variable injected current densities was demonstrated. The results indicated the potential of applying the TMAH treatment in the fabrication of the UV‐C Micro‐LED array.

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AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut

Cited by 26 publications

References 27 publications

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

AlGaN multiple quantum well deep‐ultraviolet micro‐light‐emitting diodes for high color conversion efficiency quantum dots display

P‐76: Elimination of Nanorods by Tetramethylammonium Hydroxide for the Fabrication of AlGaN‐based UV‐C Micro‐LED Array

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