AlGaInP multiquantum well light-emitting diodes

Chang, Shoou‐Jinn; Chang, Chun-Ming; Su, Y. K.; Chang, P.T.; Wu, Yu Rue; Huang, Ke; Chen, T.P.

doi:10.1049/ip-opt:19971554

Cited by 6 publications

(2 citation statements)

References 7 publications

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“…[1][2][3] Compared with other materials such as Al-GaAs or GaAsP, [4,5] the lattice-matched AlGaInP with multiple quantum wells (MQWs) structure grown on a GaAs substrate is one of the most competitive candidates to prepare red light emitting diodes (RLEDs) due to the advantages of high internal quantum efficiency (IQE), large injection and high temperature resistance. [6,7] However, the achievement in high light extraction efficiency (LEE) still has much room for improvement. A main reason is the serious light absorption by the GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Zhao¹,

Hu²,

Tang³

et al. 2018

Chinese Phys. B

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We report a type of thin film AlGaInP red light emitting diode (RLED) on a metallic substrate by electroplating copper (Cu) to eliminate the absorption of GaAs grown substrate. The fabrication of the thin film RLED is presented in detail. Almost no degradations of epilayers properties are observed after this substrate transferred process. Photoluminescence and electroluminescence are measured to investigate the luminous characteristics. The thin film RLED shows a significant enhancement of light output power (LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the GaAs parent substrate. The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm 2 and 35 A/cm 2 respectively from electroluminescence. Moreover, reduced forward voltages, stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing. These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes. The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices, especially for thin film types.

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Section: Introductionmentioning

confidence: 99%

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Zhao¹,

Hu²,

Tang³

et al. 2018

Chinese Phys. B

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show abstract

“…1 [32,33], and the conduction band confinement is expected to be less than 50 meV. The low conduction band confinement results in the overflow of a large portion of injected electrons into the cladding layers causing high electrical leakage and low quantum efficiency [28,29]. [36].…”

Section: Current Yellow-green Leds Limitationsmentioning

confidence: 99%

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

Wang¹

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Failure modes and effects criticality analysis and accelerated life testing of LEDs for medical applications

Sawant

Christou

2012

Solid-State Electronics

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AlGaInP multiquantum well light-emitting diodes

Cited by 6 publications

References 7 publications

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

Failure modes and effects criticality analysis and accelerated life testing of LEDs for medical applications

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