AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography

Lo, H. M.; Hsieh, Ya-Ting; Shei, Shih–Chang; Lee, Y C; Zeng, X. F.; Weng, W. Y.; Lin, Nan-Ming; Chang, Shoou‐Jinn

doi:10.1109/jqe.2010.2048742

Cited by 11 publications

(5 citation statements)

References 18 publications

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“…Although quaternary AlGaInP-based LEDs have been developed quickly due to their widespread application in traffic signals, outdoor full-color displays, indoor lighting, and vehicle indications, − the size of LED chips must be greatly decreased to fulfill the demands for high-resolution display applications. However, with the decrease of chip size, the performance of μLEDs will also be greatly degraded, especially in EQE. , Due to the tiny dimensions of μLEDs, the ultrahigh surface area to volume ratio induces high nonradiative losses at the edge of the devices.…”

Section: Monochromatic μLedsmentioning

confidence: 99%

Technology and Applications of Micro-LEDs: Their Characteristics, Fabrication, Advancement, and Challenges

Lee

Chen

et al. 2022

ACS Photonics

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Micro-light-emitting diodes (μLEDs) are getting much attention in display industry because of their outstanding optical and electrical characteristics. μLEDs have several advantages over liquid crystal displays (LCDs) and organic lightemitting diodes (OLEDs). μLEDs are showing long lifetimes, high reliability, high power efficiencies, high brightness, and fast response times with tiny pixels. However, for commercial usage, the high production cost and low external quantum efficiency (EQE) are the major hurdles. In this review, we briefly discuss the breakthroughs in μLED technology, fabrication methods, optical/ electrical characteristics, and challenges for display applications. In addition, the development of monolithic μLEDs and general device characteristics combined with various quantum dot patterning processes are systematically discussed. Potential solutions to address these challenges are also presented case by case.

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Section: Monochromatic μLedsmentioning

confidence: 99%

Technology and Applications of Micro-LEDs: Their Characteristics, Fabrication, Advancement, and Challenges

Lee

Chen

et al. 2022

ACS Photonics

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“…Given the recent strong interest in the epitaxial quality of AlGaInP-based materials, the application of AlGaInPbased light-emitting diodes (LEDs) has been extended to automotive lighting, full-color displays, and visible light communications, which require high-brightness and high-power operation [1][2][3][4]. A vertical-injection geometry through wafer-bonded Si conductive substrates with a reflective electrode has been suggested as a solution to increase the light output power of AlGaInP-based LEDs because vertical-injection LEDs (VI-LEDs) yield better current spreading, good heat dissipation, and simple packaging [5,6].…”

Section: Introductionmentioning

confidence: 99%

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Ryu¹,

Park²,

Oh³

et al. 2016

Nano Online

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The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars,~200 nm in diameter, were produced using SiO 2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlGaInP-based VI-LEDs with the n-AlGaInP nanopillars provided 25 % light output power enhancement compared to VI-LEDs with a surface-roughened n-AlGaInP because of the reduced total internal reflection by the nanopillars at the n-AlGaInP/air interface with a large refractive index difference of 1.9.

show abstract

“…Given the recent strong interest in the epitaxial quality of AlGaInP-based materials, the application of AlGaInP-based light-emitting diodes (LEDs) has been extended to automotive lighting, full-color displays, and visible light communications, which require high-brightness and high-power operation [1–4]. A vertical-injection geometry through wafer-bonded Si conductive substrates with a reflective electrode has been suggested as a solution to increase the light output power of AlGaInP-based LEDs because vertical-injection LEDs (VI-LEDs) yield better current spreading, good heat dissipation, and simple packaging [5, 6].…”

Section: Introductionmentioning

confidence: 99%

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Ryu

Park

et al. 2015

Nanoscale Res Lett

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The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlGaInP-based VI-LEDs with the n-AlGaInP nanopillars provided 25 % light output power enhancement compared to VI-LEDs with a surface-roughened n-AlGaInP because of the reduced total internal reflection by the nanopillars at the n-AlGaInP/air interface with a large refractive index difference of 1.9.

show abstract

AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography

Cited by 11 publications

References 18 publications

Technology and Applications of Micro-LEDs: Their Characteristics, Fabrication, Advancement, and Challenges

Technology and Applications of Micro-LEDs: Their Characteristics, Fabrication, Advancement, and Challenges

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

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