AlGaAsSb∕InGaAsSb phototransistors for spectral range around 2 [micro sign]m

Sulima, O.V.; Refaat, Tamer F.; Mauk, Michael G.; Cox, J.A.; Li, J.; Lohokare, Saurabh K.; Abedin, M. Nurul; Singh, Upendra N.; Rand, James A.

doi:10.1049/el:20040422

Cited by 14 publications

(18 citation statements)

References 2 publications

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“…Several articles reported different device structures using materials such as InGaAsSb and AlGaAsSb [23][24][25][26][27][28][29] . Several reports discussed the performance of InGaAsSb APD especially for applications such as optical communication [23][24][25][26] .…”

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

“…Such devices usually involve much complicated structures with difficult material processing. Recently, using the same material, a new InGaAsSb/AlGaAsSb phototransistor has been developed [27][28][29] . Aside from an APD, a phototransistor can achieve higher gain and better signal-noise-ratio, without the excess noise effects, which makes it attractive for 2 µm applications.…”

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

“…Aside from an APD, a phototransistor can achieve higher gain and better signal-noise-ratio, without the excess noise effects, which makes it attractive for 2 µm applications. The performance of these devices has even exceeded the InGaAs pin technology in some areas [27][28][29] . In the following section we will focus on the characterization results for these new devices and compare their characteristics with state-of-the art InGaAs and InGaSb devices.…”

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

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III-V compound detectors for CO 2 DIAL measurements

et al. 2005

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Profiling of atmospheric carbon dioxide (CO 2 ) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 µm wavelength, for investigating atmospheric CO 2 . This drives the need for high quality detectors at this wavelength. Although 2 µm detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application.In this paper the detector requirements for a long range CO 2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-µm detectivity as high as 3.

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Section: Iii-v Compound Detectorsmentioning

confidence: 99%

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

Section: Iii-v Compound Detectorsmentioning

confidence: 99%

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III-V compound detectors for CO 2 DIAL measurements

et al. 2005

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“…In this context, it is necessary to explore alternative material systems, which can absorb radiation in the 1.0-to 2.5-μm range and are compatible with general requirements of a low-noise detector. InGaAsSb/AlGaAsSb heterostructures are very suitable for this application, and single-element HPTs based on these heterostructures demonstrated record responsivitites [3,4,[8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…These devices have been characterized at NASA LaRC and encouraging results have been obtained, including high responsivity, high detectivity, and relatively low NEP [3,4,[8][9][10][11][12][13][14]. Development of large-format Sb-based phototransistor FPA will enhance the capability of space-based active and passive remote sensing imaging systems and enable major advances in Astronomical, Earth, and planetary instruments.…”

Section: Introductionmentioning

confidence: 99%

Infrared detector activities at NASA Langley Research Center

Abedin

Refaat

Sulima³

et al. 2008

MRS Proc.

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Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

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