AlGaAsSb/AlAsSb microcavity designed for 1.55 [micro sign]m and grown by molecular beam epitaxy

Kohl, A.; Harmand, J.C.; Oudar, Jean‐Louis; Rao, E. V. K.; Kuszelewicz, R.; Delpon, E. Lugagne

doi:10.1049/el:19970447

Cited by 2 publications

(1 citation statement)

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“…Materials belonging to the group III-V antimonide family materials, such as GaAsSb and AlGaAsSb alloys, lattice matched to InP, have been used in the past for heterojunctions structures in electronic and optoelectronic devices in the range of 1.0-2.0 m. [1][2][3][4][5][6][7][8][9][10][11][12] These alloys show compositional inhomogeneity due to phase separation resulting from miscibility gaps. 13,14 Variation in the alloy composition produces fluctuation of the electrostatic potential, affecting excitonic transitions and donor and acceptor recombination.…”

Section: Introductionmentioning

confidence: 99%

Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP

Filho

Dias

Laureto

et al. 2005

Journal of Applied Physics

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