Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2020
DOI: 10.7567/ssdm.2020.k-5-05
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AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode

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“…At the abstract of the solid-state devices and materials 2020 conference, we reported the molecular beam epitaxy of an AlGaAs/GaAs superlattice structures, investigated their photoluminescence (PL), and the quantum efficiency of photoelectron emissions. 4) The growth of the AlGaAs/GaAs fine-structured superlattices requires a developed epitaxial growth technique. And, their optical quality should have a correlation with the efficiency of the photocathodes.…”
mentioning
confidence: 99%
“…At the abstract of the solid-state devices and materials 2020 conference, we reported the molecular beam epitaxy of an AlGaAs/GaAs superlattice structures, investigated their photoluminescence (PL), and the quantum efficiency of photoelectron emissions. 4) The growth of the AlGaAs/GaAs fine-structured superlattices requires a developed epitaxial growth technique. And, their optical quality should have a correlation with the efficiency of the photocathodes.…”
mentioning
confidence: 99%