ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions

Kim, Hogyoung; Jung, Myeong Jun; Choi, Seok Cheol; Choi, Byung Joon

doi:10.1016/j.mtcomm.2020.101265

Cited by 12 publications

(3 citation statements)

References 41 publications

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“…LT-grown Zno films are widely used in optoelectronic and photovoltaic applications, such as transparent conducting oxides, transparent thin-film transistors [3], solar cells [4], thermoelectric devices [5], and light-emitting diodes. [6] in this study, we investigated whether Zno thin films deposited in the LT regime (46-141℃) possess similar properties to those deposited at higher temperatures (above 200°C). Guziewicz et al reported on the electrical properties of ZnO films grown on Sio 2 /Si substrates at 90-200℃.…”

Section: Introductionmentioning

confidence: 99%

Archives of Metallurgy and Materials

2022

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Structural, electrical, and optical propertieS of Zno filmS grown by atomic layer depoSition at low temperature Zinc oxide (Zno) is a prominent n-type semiconductor material used in optoelectronic devices owing to the wide bandgap and transparency. The low-temperature growth of Zno thin films expands diverse applications, such as growth on glass and organic materials, and it is also cost effective. however, the optical and electrical properties of Zno films grown at low temperatures may be inferior owing to their low crystallinity and impurities. in this study, Zno thin films were prepared by atomic layer deposition on Sio 2 and glass substrates in the temperature range of 46-141℃. All films had a hexagonal würtzite structure. The carrier concentration and electrical conductivity were also investigated. The low-temperature grown films showed similar carrier concentration (a few 10 19 cm −3 at 141°C), but possessed lower electrical conductivity compared to high-temperature (>200°C) grown films. The optical transmittance of 20 nm thin Zno film reached approximately 90% under visible light irradiation. additionally, bandgap energies in the range of 3.23-3.28 eV were determined from the Tauc plot. Overall, the optical properties were comparable to those of Zno films grown at high temperature.

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Section: Introductionmentioning

confidence: 99%

Archives of Metallurgy and Materials

2022

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“…ZnO ince filmi bir çok materyal ile p-n veya Schottky diyotların yapımında çok farklı tekniklerle üretilerek incelenmiştir. n-ZnO/p-Si heteroeklem yapısı da püskürtme yöntemi [18][19], magnetron püskürtme yöntemi [20][21][22][23][24], sol-jel yöntemi [25][26][27][28], atomik tabaka biriktirme yöntemi [29][30] ve termal buharlaştırma yöntemi [31][32] ile üretilmiş ve sonuçları rapor edilmiştir.…”

Section: Introductionunclassified

Termal buharlaştırma yöntemi ile üretilen n-ZnO/p-Si heteroeklem kontakların elektriksel ve optiksel karakterizasyonu

Özkartal

2021

Bitlis Eren Üniversitesi Fen Bilimleri Dergisi

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ÖzBu çalışmada, n-ZnO ince filmi hem p-Si yarıiletkeni ve hem de mikroskop camı üzerinde termal buharlaştırma yöntemi ile üretildi. n-ZnO ince filmler, UV-Vis spektroskopisi, X-ışını kırınımı (XRD) ve enerji dağılımlı X-ışını spektroskopisi (EDX) ile incelendi. n-ZnO/p-Si diyotların elektriksel özellikleri karanlıkta ve oda sıcaklığında, akım-voltaj (I-V) ve kapasitans-voltaj (C-V) ölçümleri ile belirlendi. Üretilen numunelerin idealite faktörü (n), engel yüksekliği (Фb) ve seri direnci (Rs), I-V ve C-V ölçümlerinden ve Cheung fonksiyonlarından hesaplandı. Ayrıca n-ZnO/p-Si diyotların fotodiyot özellikleri 100 mW/cm 2 ve AM 1.5 aydınlatma altında incelendi.

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“…The complex band structure with multiple orbital components narrows the band gap and therefore extends the optical absorption in both the visible and near-infrared regions . Moreover, CuBi 2 O 4 exhibits a photocurrent onset ranging between 1.1 and 1.4 V RHE significantly more positive than other p-type photocathode materials, including gallium phosphide (GaP), p-type silicon, and copper(I) oxide (Cu 2 O). − Such advantages suggest CuBi 2 O 4 as an ideal candidate for a bottom absorber in a tandem PEC device …”

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confidence: 99%

Spectroelectrochemical Identification of CuO Impurities Catalyzing Water Reduction on CuBi₂O₄ Photocathodes

Zhang,

Lin,

Duan

et al. 2024

ACS Energy Lett.

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We identify the function of CuO impurities in CuBi 2 O 4 photocathodes significantly improving the photoelectrochemical water reduction efficiency. Spectroelectrochemical photo/voltage-induced absorption spectroscopies are employed to investigate the charge carrier dynamics of pure, CuO-impure, and CuO-covered CuBi 2 O 4 photocathodes during photoelectrochemical water reduction, in comparison with the CuO/FTO for electrochemical water reduction. Electrons after photoexciation are found to accumulate at the surface CuO in both CuO-covered and impure CuBi 2 O 4 photocathodes, rather than directly reducing water from the CuBi 2 O 4 conduction band. A rate law analysis is employed to compare the kinetics of water reduction in CuO/FTO electrochemically and CuBi 2 O 4 photoelectrochemically, showing a faster water reduction rate constant in CuO than CuBi 2 O 4 . The kinetic comparison demonstrates that the CuO impurity functions as a cocatalyst on the surface of CuBi 2 O 4 during water reduction due to the faster kinetics. Our results demonstrate the importance of considering the catalytic function of surface impurities responsible for the enhancement of water reduction efficiency.

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ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions

Cited by 12 publications

References 41 publications

Archives of Metallurgy and Materials

Archives of Metallurgy and Materials

Termal buharlaştırma yöntemi ile üretilen n-ZnO/p-Si heteroeklem kontakların elektriksel ve optiksel karakterizasyonu

Spectroelectrochemical Identification of CuO Impurities Catalyzing Water Reduction on CuBi₂O₄ Photocathodes

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ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions

Cited by 12 publications

References 41 publications

Archives of Metallurgy and Materials

Archives of Metallurgy and Materials

Termal buharlaştırma yöntemi ile üretilen n-ZnO/p-Si heteroeklem kontakların elektriksel ve optiksel karakterizasyonu

Spectroelectrochemical Identification of CuO Impurities Catalyzing Water Reduction on CuBi2O4 Photocathodes

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Spectroelectrochemical Identification of CuO Impurities Catalyzing Water Reduction on CuBi₂O₄ Photocathodes