ALD-based confined PCM with a metallic liner toward unlimited endurance

Kim, W.; BrightSky, M.; Masuda, Takeshi; Sosa, Norma; Kim, S.; Bruce, Robert L.; Carta, Fabio; Fraczak, Gloria; Cheng, Huai-Yu; Ray, A.; Zhu, Yu; Lung, Hsiang-Lan; Suu, Koukou; Lam, C.

doi:10.1109/iedm.2016.7838343

Cited by 65 publications

(42 citation statements)

References 8 publications

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“…A significant advancement in the semiconductor technology has led to the use of phase change memory (PCRAM) in a commercial product to perfect the storage system [1][2][3] . As the most important key material of PCRAM, Ge 2 Sb 2 Te 5 (GST) alloy 4,5 , is proved to have long cyclability 6 , high density 7 , and nanosecond switching speed 8 characteristics. Induced by thermal annealing, amorphous (a-) GST material will crystallize into a metastable face-centered-cubic (f-) structure (Fm3m, a = 6.02 Å) at~150°C with a cationic Ge/Sb/vac f-sublattice and an anionic Te f-sublattice, accompanied by more than 4 orders of magnitude resistance decreasing 9,10 .…”

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confidence: 99%

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

et al. 2019

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GeTe-Sb 2 Te 3 pseudobinary system, especially Ge 2 Sb 2 Te 5 alloy, is the most desirable material to be commercialized in phase change random access memory. Directly resolving the local atomic arrangement of Ge 2 Sb 2 Te 5 during intermediate steps is an effective method to understand its transition mechanism from face-centered-cubic to hexagonal phases. In this study, we provide insights into the atomic arrangement variation during face-centered-cubic to hexagonal transition process in Ge 2 Sb 2 Te 5 alloy by using advanced atomic resolution energy dispersive X-ray spectroscopy. Induced by thermal annealing, randomly distributed germanium and antimony atoms would migrate to the specific (111) layer in different behaviors, and antimony atoms migrate earlier than germanium atoms during the phase transition process, gradually forming intermediate structures similar to hexagonal lattice. With the migration completed, the obtained stable hexagonal structure has a partially ordered stacking sequence described as below:-Te-Sb x /Ge y-Te-Ge x /Sb y-Te-Ge x /Sb y-Te-Sb x /Ge y-Te-(x > y), which is directly related to the migration process. The current visual fragments suggest a gradual transition mechanism, and guide the performance optimization of Ge 2 Sb 2 Te 5 alloy.

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confidence: 99%

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

et al. 2019

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“…Phase‐change random access memory (PCRAM) offers low power consumption, fast switching speeds, and excellent scalability . Recently, it was shown that the switching properties of Ge–Sb–Te based materials used in PCRAM can be further improved by arranging the pseudobinary components Ge–Te and Sb–Te into a superlattice (SL) structure, leading to a significant decrease in switching power consumption .…”

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confidence: 99%

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Mitrofanov

Saito

Miyata

et al. 2019

Physica Rapid Research Ltrs

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Ge–Sb–Te alloy based phase‐change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 104 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase‐change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.

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“…The read endurance is assumed to be unlimited. There are also recent reports of more than 10 12 RESET/SET endurance 47 . Note that in our experiments, we mostly apply only the SET pulses, and in this case the endurance is expected to be substantially higher.…”

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confidence: 98%

Temporal correlation detection using computational phase-change memory

et al. 2017

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Conventional computers based on the von Neumann architecture perform computation by repeatedly transferring data between their physically separated processing and memory units. As computation becomes increasingly data centric and the scalability limits in terms of performance and power are being reached, alternative computing paradigms with collocated computation and storage are actively being sought. A fascinating such approach is that of computational memory where the physics of nanoscale memory devices are used to perform certain computational tasks within the memory unit in a non-von Neumann manner. We present an experimental demonstration using one million phase change memory devices organized to perform a high-level computational primitive by exploiting the crystallization dynamics. Its result is imprinted in the conductance states of the memory devices. The results of using such a computational memory for processing real-world data sets show that this co-existence of computation and storage at the nanometer scale could enable ultra-dense, low-power, and massively-parallel computing systems.

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ALD-based confined PCM with a metallic liner toward unlimited endurance

Cited by 65 publications

References 8 publications

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability

Temporal correlation detection using computational phase-change memory

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