ALD Al<sub>2</sub>O<sub>3</sub> gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

Chen, Kuan‐Yu; Yang, Chih-Chiang; Huang, Chun-Yuan; Su, Yan–Kuin

doi:10.1039/d0ra00123f

Cited by 9 publications

(2 citation statements)

References 23 publications

(19 reference statements)

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“…For further verification of reduction for interfacial trap density, the hysteresis of the transfer curves was measured under gate voltage sweeping from -50 V to 50 V back and forth for ZnO and Si-ZnO 1/10 cases, which is shown in Figure S6 (SI). The large difference of hysteresis around the subthreshold region in ZnO indicates the high trap density between the insulator and active layer, while it is suppressed in Si-ZnO 1/10, which means that the device drives faster and has an energy-saving effect [66].…”

Section: Xps Resultsmentioning

confidence: 99%

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Hong

Kim

Lee

et al. 2023

International Journal of Energy Research

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Si-ZnO thin-film transistors were fabricated using atomic layer deposition (ALD) then annealed in oxygen at 400°C for 1 hour and are demonstrated. Hexagonal wurtzite structure for ZnO was presented in all films, with a primary diffracted peak in the (100) direction regardless of the annealing treatment. First-principle density functional theory (DFT) calculations supported the observed crystalline characteristics. Electrical characteristics were improved with Si doping, increasing carrier concentration to 3.51 × 10 20 c m − 3 and reducing film resistivity to 0.28 × 10 − 1 Ω . cm with well-matched optical bandgap widening from UV-vis results using Tauc plot: Burstein-Moss (BM) effects. After implementing the oxygen ambient annealing and Si doping, the device parameters to realize the low power/energy consumption were improved to an SS value of 0.67 V/decade; threshold voltage ( V th ) of 0.68 V; and a field effect mobility ( μ FE ) of 5.22 cm2/V·s, respectively. The improved device parameters were related to the reduced interface trap densities due to annealing passivated oxygen vacancies, and the BM effect induced percolation conduction with increased carrier concentration due to Si doping, respectively. Thus, incorporating Si-based ZnO materials by ALD offers a viable candidate for superior device characteristics for energy-saving appliances.

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Section: Xps Resultsmentioning

confidence: 99%

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Hong

Kim

Lee

et al. 2023

International Journal of Energy Research

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“…A low SS can help turn on the device faster with a low voltage difference. In this study, the device SS reduces with anion/cation codoping, attributable to the decrease in the interfacial trap density (N it ) around the semiconductor-insulator interface according to the following relation [61]:…”

Section: Conditionmentioning

confidence: 99%

Improvement in the Stability of Cation (Si)/Anion (F or N) Codoped ZnO Thin-Film Transistors Formed via Atomic Layer Deposition

Hong,

Kim,

Lim

et al. 2023

International Journal of Energy Research

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The characteristics of cation (Si) and anion (F or N) codoped ZnO thin films formed via atomic layer deposition and corresponding device properties were investigated for different anion doping concentrations with a fixed Si doping amount. All films exhibited the (100) primary diffraction peak, indicating a hexagonal wurtzite structure. All codoped ZnO films exhibited the same effect of oxygen vacancy passivation, i.e., reduced oxygen vacancy. However, the electrical and optical characteristics of the films exhibited contrasting tendencies depending on the type of anion element. The optimized device properties, i.e., the subthreshold swing, field-effect mobility, threshold voltage, and bias stability were 6.62 E − 01 V/dec, 5.10 cm2/V·s, -11.16 V, and 6.32 V in the Si/F-19 condition and 5.98 E − 01 V/dec, 16.60 cm2/V·s, 1.07 V, and 0.14 V in the Si/N-19 condition, respectively. These characteristics were attributable to the correlation effects of the reduced interfacial trap density from Si doping and oxygen vacancy passivation from anion doping. Notably, the behavior of each anion was different in terms of the charge carrier concentration. First-principles calculations based on the density functional theory using the Vienna ab initio simulation package (VASP) code were performed to obtain valuable insights into the energy band structure in terms of the performance of the codoped ZnO films.

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Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

et al. 2021

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ALD Al₂O₃ gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

Abstract: The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Cited by 9 publications

References 23 publications

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Improvement in the Stability of Cation (Si)/Anion (F or N) Codoped ZnO Thin-Film Transistors Formed via Atomic Layer Deposition

Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

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ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

Abstract: The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Cited by 9 publications

References 23 publications

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition

Improvement in the Stability of Cation (Si)/Anion (F or N) Codoped ZnO Thin-Film Transistors Formed via Atomic Layer Deposition

Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

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ALD Al₂O₃ gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT