2016
DOI: 10.1111/jace.14261
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Al5BO9: A Wide Band Gap, Damage‐Tolerant, and Thermal Insulating Lightweight Material for High‐Temperature Applications

Abstract: The electronic structure, chemical bonding, mechanical, and thermal properties of a B‐containing mullite Al5BO9 were investigated using a combination of first‐principles calculations, Debye model, Clack model, and Slack's equation. The results show that Al5BO9 has a wide band gap of 6.4 eV. The bonding in BO3 triangle and AlO4 tetrahedron is covalent‐ionic, whereas that in AlO6 octahedra and AlO5 bipyramids is ionic‐covalent. The maximum (245 GPa) and minimum Young's modulus (161 GPa) are along [100] and [010]… Show more

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Cited by 16 publications
(24 citation statements)
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“…Nevertheless, the experimental results are comparable with the theoretical values. In accordance with the theoretical predicted data, 12 shear modulus of Al 5 BO 9 is much lower than the Young's modulus E and bulk modulus B . Low shear modulus indicates low shear deformation resistance of Al 5 BO 9 .…”
Section: Resultssupporting
confidence: 88%
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“…Nevertheless, the experimental results are comparable with the theoretical values. In accordance with the theoretical predicted data, 12 shear modulus of Al 5 BO 9 is much lower than the Young's modulus E and bulk modulus B . Low shear modulus indicates low shear deformation resistance of Al 5 BO 9 .…”
Section: Resultssupporting
confidence: 88%
“…Table 4 shows the bulk modulus, shear modulus, Young's modulus, Pugh's ratio, and Vickers hardness of polycrystalline Al 5 BO 9 . The theoretically predicted data of Zhou et al 12 are also included for comparison. It is worth mentioning that the dimensional error of the sample for IET measurement exists.…”
Section: Resultsmentioning
confidence: 99%
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“…Furthermore, interaction diagrams as depicted in Figure 5 offer a pathway to design materials that meet certain constraints and requirements. For example, substantial differences in thermal expansion coefficients among the ma-terials used in high-power, high-frequency optoelectronic applications leads to bending and cracking of the structure during the growth process [91,102]. Not only would this work-flow facilitate the search for semiconductors with large band gap energies, high Debye temperatures (thermal conductivity), but also materials with similar thermal expansion coefficients.…”
Section: Discussionmentioning
confidence: 99%