Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer

Charge trapping memory with the P-Si/Al2O3/LaTiO/Al2O3/Pt structure was fabricated by a pulsed laser deposition system. An innovative high-k nanocrystal-amorphous phase structure could be stably formed in the charge trapping layer. The La2O3 nanocrystals are embedded in amorphous TiO2. Numerous charge traps are generated at the phase interface, which could significantly increase the charge trapping capability. A larger memory window of 16.56 V at ±12 V sweep voltage is observed, comparing with a lower value of 5.52 V for the simple amorphous structure. The device also demonstrated excellent stability, with only a 13% charge loss rate after 10 years and an unchanged memory window after 105 program/erase cycles. It is attributed to the structure that the amorphous phase isolates the trapped electrons around the nanocrystal and, thus, is resistant to loss. This work could provide an approach to generating charge traps by phase separation of high-k materials for future nonvolatile memory applications.

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Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer

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ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3/C7H8 precursor and ozone

Atomic layer deposition of Y₂O₃ films using heteroleptic liquid (iPrCp)₂Y(iPr-amd) precursor

Enhanced charge trapping characteristics through composite high-k material phase separation

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Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer

Cited by 3 publications

References 0 publications

ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3/C7H8 precursor and ozone

ZrO2 film prepared by atomic layer deposition using less viscous cocktail CpZr[N(CH3)2]3/C7H8 precursor and ozone

Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor

Enhanced charge trapping characteristics through composite high-k material phase separation

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Atomic layer deposition of Y₂O₃ films using heteroleptic liquid (iPrCp)₂Y(iPr-amd) precursor