2008
DOI: 10.1149/1.2977971
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Al–Si Thin-Film Negative Electrodes for Li-Ion Batteries

Abstract: Thin-film normalAl1−xnormalSix(0 Show more

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Cited by 49 publications
(29 citation statements)
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References 30 publications
(11 reference statements)
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“…76 80 or alloyed with other elements, such as Si. [81][82][83] Due to the large volume expansion associated with lithiation, it also suffers from mechanical degradation, such as cracking. To understand the difference between an Al and a Si anode, we computed the C ij and averaged B, G, E, and ν for crystalline LiAl and Li 9 Al 4 .…”
Section: )mentioning
confidence: 99%
“…76 80 or alloyed with other elements, such as Si. [81][82][83] Due to the large volume expansion associated with lithiation, it also suffers from mechanical degradation, such as cracking. To understand the difference between an Al and a Si anode, we computed the C ij and averaged B, G, E, and ν for crystalline LiAl and Li 9 Al 4 .…”
Section: )mentioning
confidence: 99%
“…In addition, ductile Al works as a buffer, placed between Si films to form a multilayer structure for improving the electronic conductivity. The total thickness of Al film reaches 10 nm [116][117][118][119][120]. The anode has been tested in LIBs.…”
Section: Al-si Alloymentioning
confidence: 99%
“…[32]. The magnetron sputtering [21][22][23] of co-deposition can provide composite of two kinds of materials, such as Si-Al. Ballmilling [29][30][31] is also an important method for provide composite materials, such as Si-C, Si x Co 0.3 Cu 0.3 Cr 0.6 Al 0.2/ modified graphite sphere composties, etc., through blending and doping various elements in the Silicon materials.…”
Section: Preparation Techniques For Various Nanostructure Silicon Anomentioning
confidence: 99%
“…Ballmilling [29][30][31] is also an important method for provide composite materials, such as Si-C, Si x Co 0.3 Cu 0.3 Cr 0.6 Al 0.2/ modified graphite sphere composties, etc., through blending and doping various elements in the Silicon materials. Si-Al thin film [22,23] 1500 ~ 50 cycles 2258~10,1500~350 (0.5C) Catalytic etching (HF-AgNO3, etc. )…”
Section: Preparation Techniques For Various Nanostructure Silicon Anomentioning
confidence: 99%