Al plasmon-enhanced diamond solar-blind UV photodetector by coupling of plasmon and excitons

Shi, Xiaoqing; Yang, Zhengming; Yin, Shichen; Zeng, Haibo

doi:10.1080/10667857.2016.1204511

Cited by 28 publications

(19 citation statements)

References 19 publications

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Section: Diamondmentioning

confidence: 99%

“…The relatively high responsivity was ascribed to the full depletion of the shrunk electrode spacing at low biases. Through assembling of Al crescent‐shaped arrays on homoepitaxial diamond thin films, Shi et al developed a localized surface plasmon (LSP)–enhanced MSM DUVPD (Figure e) . Under 225 nm illumination and at 5 V, the devices showed peak responsivity of 28 mA W −1 , which was tenfold higher than that of the pure diamond photodetector (Figure f).…”

Section: Diamondmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Diamondmentioning

confidence: 99%

Section: Diamondmentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

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show abstract

“…When exposed to 350 nm UV at an intensity of 0.01, 0.03, and 1 mW/cm 2 , the quick and well-defined responses of external and internal electrodes-based PDs under zero bias voltage are observed (Figure 21a). The spectral response to wavelengths from 186 nm to 550 nm peaks at 300 nm (Figure 21b), indicating that the direct band-to-band transition (~5.5 eV) within the diamond bandgap is reduced in B-UNCD to 4.1 eV based on Mendoza's model and the relationships shown in Figure 21b, due to the shift of the scattering cross-section caused by the Pt NPs, increment in midgap states corresponding to boron doping, the presence of sp 2 -bonded carbon in grain boundaries, and B3O and B4O defects [83,[93][94][95][96], although further investigation of the observed bandgap shift is needed. The response decreases rapidly at longer visible wavelengths, and the UV-Visible rejection ratio R300/R550 goes up by five orders of magnitude.…”

Section: Uv Photodetectorsmentioning

confidence: 93%

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

Zhou¹,

Wang²,

Pacheco³

et al. 2021

Preprint

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The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect based devices, biological applications, and nitrogen-vacancy color center based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and future outlook in this area.

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“…It is found that in the 10-60 nm wavelength range, the light emission current dominates when the wavelength is greater than 40 nm, while the internal photocurrent plays a major role when the wavelength is less than about 25 nm [70]. In recent years, the development of new device structures mainly focus on improving the light absorption efficiency and carrier transmission efficiency of diamond detectors, including the use of electrodes of different materials, the design of electrodes of different shapes and sizes, and the construction of three-dimensional structures [71][72][73][74]. Among them, an all-carbon diamond photodetector achieves the best photoresponsivity of 21.8 A/W (218 nm, 50 V bias) [74].…”

Section: Film-structurementioning

confidence: 99%

Vacuum-ultraviolet photodetectors

2020

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High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to space science, radiation monitoring, electronic industry and basic science. Due to the absolute advantages in VUV selective response and radiation resistance, ultra-wide bandgap semiconductors such as diamond, BN and AlN attract wide interest from researchers, and thus the researches on VUV photodetectors based on these emerging semiconductor materials have made considerable progress in the past 20 years. This paper takes ultra-wide bandgap semiconductor filterless VUV photodetectors with different working mechanisms as the object and gives a systematic review in the aspects of figures of merit, performance evaluation methods and research progress. These miniaturized and easily-integrated photodetectors with low power consumption are expected to achieve efficient VUV dynamic imaging and single photon detection in the future.

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Al plasmon-enhanced diamond solar-blind UV photodetector by coupling of plasmon and excitons

Cited by 28 publications

References 19 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

Vacuum-ultraviolet photodetectors

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