Al/MoO<sub>3</sub>/ZnPc/Al Broken Gap Tunneling Hybrid Devices Design for IR Laser Sensing and Microwave Filtering

Qasrawi, A.F.; Khanfar, Hazem K.

doi:10.1109/jsen.2020.3009986

Cited by 15 publications

(7 citation statements)

References 30 publications

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“…Extremely large rectification ratios of the order of 10 4 were reported for these interfaces [11]. As also seen from the band diagram illustrated in figure 1, the work function of Au is larger than that of p-ZnPc ( f = -q 4.54 p ZnPc eV [7]) forming an ohmic contact at the Au/p-ZnPc interface. Here electrons flow from Au to p-ZnPc easily.…”

Section: Design Considerationsmentioning

confidence: 81%

“…ZnPc deposited onto indium tin oxide substrates showed structural phase transitions that resulted in enhanced light absorption and novel photovoltaic properties [6]. Deposition of ZnPc layers onto MoO 3 allowed multifunctionality of the devices and make it suitable for IR and microwave sensing [7]. In addition forming of ZnPc films onto Au substrates enhanced the light absorption by 4.7 and 128.2 times in the visible and infrared regions of light, respectively [8].…”

Section: Introductionmentioning

confidence: 99%

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ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Qasrawi,

Daragme

2024

Phys. Scr.

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Herein Zinc phthalocyanine (ZnPc) based multifunctional devices are fabricated and characterized. The device fabrication included formation of an Au nanosheets onto n-Si wafers and coating these nanosheets with 500 nm thick ZnPc layer. Silver and platinum were used to form a Schottky and an ohmic contacts with n-Si and ZnPc, respectively. The device hybrid structure (Ag/n-Si/Au/p-ZnPc/Pt; abbreviated as ASZ) is composed of Ag/n-Si Schottky arm and p- and n- layers forming pn junction separated by Au nanosheets. Electrical and photoelectrical measurements on the ASZ devices have shown their ability to perform as conventional metal-oxide-semiconductor capacitors (CMOS). These CMOS devices showed light and frequency controlled charge accumulation, depletion and inversion mechanisms within the range of 1.0-50 MHz. The flat band and threshold voltages of the ASZ capacitors are engineered by the imposed ac signal frequency and by infrared (IR) light. In addition, ASZ devices performed as biasing controlled IR photosensors and as current rectifiers. A rectification ratio of 103, IR light sensitivity of 39, specific detectivity of .96×109 Jones and current responsivity exceeding 9.0 mA/W are recorded at biasing voltage of 4.5 V. Moreover ASZ devices displayed microwave resonator characteristics presented by negative capacitance effect, resonance –antiresonance phenomena and high microwave cutoff frequency. The latter is larger than 10 GHz nominating the device for 6G technology applications.

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Section: Design Considerationsmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Qasrawi,

Daragme

2024

Phys. Scr.

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“…[17,18] Studied which targeted the dielectric properties of Cu 0.5 Tl 0.5 Ba 2 Ca 3 Cu 4 O 12−𝛿 bulk superconductors assigned the presence of negative capacitance to the trapping processes, charge carriers capture and emission, space charge effect, contact injections, or interface effects. [19] In line with pulsed laser welding technique for optimizing smart features of materials, orthorhombic Hf 0. 5 Zr 0.…”

Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of Orthorhombic AgMn Alloys by the Pulsed Laser Welding Technique

Khanfar¹,

Qasrawi

2022

Crystal Research and Technology

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Herein, AgMn alloys are prepared by the pulsed laser welding technique in an argon atmosphere. The effect of the laser pulses width and stoichiometric composition of the alloys on the structural, compositional, morphological, and electrical properties are investigated. In contrast to the traditional preparation techniques which reveal cubic structure of AgMn alloys, the pulsed laser welding technique reveals the orthorhombic phase of the alloys. The lattice parameters of the orthorhombic phase of AgMn are α=13.0250normalÅ,b=15.7768normalÅ,c=2.6728normalÅ$\alpha = 13.0250\ \text{\AA} ,\ b=15.7768\ \text{\AA} ,\ c=2.6728\ \text{\AA} $. It is observed that pulse widths of 50 ms are the optimum from preparing these alloys. From an electrical point of view, the AgMn alloys exhibit negative dielectric constant and negative conductance effect in the microwave frequency domain. The impedance spectroscopy analyses in the frequency domain of 0.01–1.80 GHz have shown that AgMn alloys can be employed as band filters with return loss value of ≈16 dB. The features of the AgMn alloys which are achieved by the pulsed laser welding technique nominate them for use as negative capacitance and negative conductance transistors. These devices are suitable for noise reduction and parasitic capacitance cancellation.

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“…The good consistency between the experimentally determined and theoretically estimated conductivity and capacitance spectral data assures the domination of the quantum mechanical tunneling at low frequencies below 760 MHz and the domination of correlated barrier hopping at high frequencies [15][16][17][18] . The poor fitting of the total conductivity at high frequencies (1000-1600 MHz) can ascribed to the existence of more than one kind of correlated and tunneling barriers which needs additional fitting to explore its origin 19 .…”

mentioning

confidence: 99%

“…As for examples, coating CdSe (E g =1.78 eV) onto CdS ( eV) 21,22 enabled CdSe exhibiting microwave resonator characteristics. In addition to this feature, in most of the mentioned heterojunctions that are comprising CdSe 6,[19][20][21][22] , inverted two MOSFET characteristics is not observed. As a result coating CdSe with GeO 2 is necessary for allowing multifunctionalities of the CdSe/GeO 2 interfaces.…”

mentioning

confidence: 99%

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Khusayfan¹,

Khanfar²,

Alharbi³

2021

Mat. Res.

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Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p −type germanium dioxide coated onto Au/ n -CdSe substrates and top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out with the help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers of CdSe and GeO 2 . The design of the energy band diagram has shown the formation of two Schottky arms (Au/n −CdSe, C/GeO 2 ) at the interfaces of the n − CdSe/ p −GeO 2 layers. The capacitance-voltage characteristics which are recorded in the frequency domain of 1.0-50.0 MHz revealed the ability of formation of NMOS and PMOS layers. The signal frequency controlled built in potential is tunable in the range of 2.34 and 5.18 eV. In addition, the conductance and capacitance spectral analyses in the frequency domain of 10-1800 MHz revealed the domination of current conduction by tunneling and correlated barriers hoping below and above 760 MHz, respectively. In addition to its features as MOSFET devices, the Au/CdSe/GeO 2 /C hybrid devices are found to be appropriate for use as microwave cavities.CdSe/GeO 2 , MOSFET, band diagram, microwave cavity.

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Al/MoO₃/ZnPc/Al Broken Gap Tunneling Hybrid Devices Design for IR Laser Sensing and Microwave Filtering

Cited by 15 publications

References 30 publications

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Preparation and Characterization of Orthorhombic AgMn Alloys by the Pulsed Laser Welding Technique

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

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Al/MoO3/ZnPc/Al Broken Gap Tunneling Hybrid Devices Design for IR Laser Sensing and Microwave Filtering

Cited by 15 publications

References 30 publications

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Preparation and Characterization of Orthorhombic AgMn Alloys by the Pulsed Laser Welding Technique

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

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Al/MoO₃/ZnPc/Al Broken Gap Tunneling Hybrid Devices Design for IR Laser Sensing and Microwave Filtering