Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC

Ikeda, Akira; Sumina, Rikuho; Ikenoue, Hiroshi; Asano, Tanemasa

doi:10.4028/www.scientific.net/msf.858.527

Cited by 3 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As specified in the previous subsection, laser irradiation of SiC immersed in a liquid allowed achieving doping of the near-surface region of the material (30–40 nm). To overcome this limitation, Ikeda et al [ 119 ] obtained Al doping of 4H-SiC with a high surface concentration and deep depth profile by irradiating single-pulse (4 J/cm 2 ) excimer laser to Al films (60–800 nm) deposited on the SiC surface. In particular, high-temperature molten Al is produced behind the laser-generated high-density Al plasma, and Al is diffused from the molten Al into 4H-SiC.…”

Section: Non-conventional Annealing and Doping Methodsmentioning

confidence: 99%

Selective Doping in Silicon Carbide Power Devices

et al. 2021

View full text Add to dashboard Cite

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices’ performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices’ manufacturing.

show abstract

Section: Non-conventional Annealing and Doping Methodsmentioning

confidence: 99%

Selective Doping in Silicon Carbide Power Devices

et al. 2021

View full text Add to dashboard Cite

show abstract

“…In particular, it is more difficult to reduce a ptype resistance of SiC than an n-type resistance [1], while a p-type layer is essential to fabricate power devices with high-breakdown and low-loss such as PiN diodes, MOS-FETs, and IGBTs. We reported that high concentration (~10 21 cm −3 ) Al can be doped into SiC by KrF excimer laser ablation of an Al film deposited on the substrate [2,3]. There are other methods of laser doping of Al with wet-chemical dopants such as Al chloride solution [4 -6], but it is difficult to apply Al chloride solution as part of the fabrication process in terms of maintenance costs.…”

Section: Introductionmentioning

confidence: 99%

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

Imokawa

Kikuchi²,

Okamoto

et al. 2019

MSF

Self Cite

View full text Add to dashboard Cite

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

show abstract

“…We have reported a doping method in which laser light is irradiated to an Al film deposited on 4H-SiC surface [9]. The laser doping processing enables us to carry out doping while keeping the 4H-SiC wafer at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

Ikeda

Shimokawa

Ikenoue

et al. 2019

MSF

Self Cite

View full text Add to dashboard Cite

Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As the result, doping depth of Al is significantly increased. The multiple shots of the expanded pulses is also fund to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.

show abstract

Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC

Cited by 3 publications

References 8 publications

Selective Doping in Silicon Carbide Power Devices

Selective Doping in Silicon Carbide Power Devices

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

Contact Info

Product

Resources

About